High Efficiency Screen-Printed Solar Cells on Textured Mono-Crystalline Silicon

Rohatgi, Ajeet; Ebong, Abasifreke; Hilali, Mohamed M.; Meemongkolkiat, Vichai; Rounsaville, Brian; Ristow, Alan

Title:

High Efficiency Screen-Printed Solar Cells on Textured Mono-Crystalline Silicon

dc.contributor.author	Rohatgi, Ajeet
dc.contributor.author	Ebong, Abasifreke
dc.contributor.author	Hilali, Mohamed M.
dc.contributor.author	Meemongkolkiat, Vichai
dc.contributor.author	Rounsaville, Brian
dc.contributor.author	Ristow, Alan
dc.contributor.corporatename	Georgia Institute of Technology. University Center of Excellence for Photovoltaic Research and Education
dc.date.accessioned	2008-12-09T20:15:59Z
dc.date.available	2008-12-09T20:15:59Z
dc.date.issued	2005-10
dc.description	Presented at the 15th International Photovoltaic Science and Engineering Conference, Shanghai, China; October 10-15, 2005.	en
dc.description.abstract	In this paper we report on high efficiency screen-printed 4 cm(2) solar cells fabricated on randomly textured float zone, magnetic Czochralski (MCz) and Ga-doped Cz silicon. A simple process involving POCl(3) emitters, low frequency PECVD silicon nitride deposition, Al back contact print, Ag front grid print followed by co-firing of the contacts produced efficiencies of 19.0% on textured float zone, 18.2% on MCz and 17.7% on Ga-doped Cz. A combination of high sheet resistance emitter (~100 Ω-/sq.) and the surface texturing resulted in short circuit current density of 37.3 mA/cm(2) for 0.6 Ω-cm float zone cell, 38.2 mA/cm(2) for 4.8 Ω-cm MCz cell and 37.4 mA/cm(2) for 1.5 Ω-cm Ga-doped Cz cell. Open circuit voltages were consistent with the base resistivity of the three materials. However, FF was highest for float zone (0.784) followed by MCz (0.759) and Ga-doped Cz (0.754). Model calculations performed using PC1D showed that, once the lifetime exceeds 200 μs for this cell design, the efficiency no longer has a strong dependence on the bulk lifetime. Instead, the performance is limited by the cell design including contacts, base resistivity, doping profiles, and front and back surface recombination velocities. Detailed analysis is performed to explain the high performance of these screen-printed cells and guidelines are provided for ≥20% efficient screen-printed cells.	en
dc.identifier.uri	http://hdl.handle.net/1853/25928
dc.language.iso	en_US	en
dc.publisher	Georgia Institute of Technology	en
dc.subject	High efficiency silicon	en
dc.subject	High sheet resistance emitter	en
dc.subject	Solar cells	en
dc.subject	Screen-printed solar cells	en
dc.title	High Efficiency Screen-Printed Solar Cells on Textured Mono-Crystalline Silicon	en
dc.type	Text
dc.type.genre	Proceedings
dspace.entity.type	Publication
local.contributor.author	Rohatgi, Ajeet
local.contributor.corporatename	School of Electrical and Computer Engineering
local.contributor.corporatename	College of Engineering
local.contributor.corporatename	University Center of Excellence for Photovoltaics
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