Title:
Role of interface disorder on thermal boundary conductance using a virtual crystal approach
Role of interface disorder on thermal boundary conductance using a virtual crystal approach
| dc.contributor.author | Beechem, Thomas | en_US |
| dc.contributor.author | Graham, Samuel | en_US |
| dc.contributor.author | Hopkins, Patrick | en_US |
| dc.contributor.author | Norris, Pamela | en_US |
| dc.contributor.corporatename | Georgia Institute of Technology. Center for Organic Photonics and Electronics | en_US |
| dc.contributor.corporatename | Georgia Institute of Technology. School of Mechanical Engineering | en_US |
| dc.contributor.corporatename | University of Virginia. Dept. of Mechanical and Aerospace Engineering | en_US |
| dc.date.accessioned | 2012-12-20T19:26:19Z | |
| dc.date.available | 2012-12-20T19:26:19Z | |
| dc.date.issued | 2007-01-05 | |
| dc.description | © 2007 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.2437685 | en_US |
| dc.description | DOI: 10.1063/1.2437685 | en_US |
| dc.description.abstract | An analytical method is presented to estimate the effects of structural disorder on the thermal boundary conductance (TBC) between two materials. The current method is an extension of the diffuse mismatch model (DMM) where the interface is modeled as a virtual crystal of finite thickness with properties derived from those of the constituent materials. Using this approximation, the TBC for a series of chromium/silicon interfaces is modeled and shown to be within 18% of experimentally obtained values. The methodology improves upon the predictive capabilities of the DMM and allows for quick estimation of the impact of interface mixing on TBC. | en_US |
| dc.identifier.citation | Beechem, Thomas and Graham, Samuel and Hopkins, Patrick and Norris, Pamela, "Role of interface disorder on thermal boundary conductance using a virtual crystal approach," Applied Physics Letters, 90, 5, (January 29 2007) | en_US |
| dc.identifier.doi | 10.1063/1.2437685 | |
| dc.identifier.issn | 1077-3118 | |
| dc.identifier.uri | http://hdl.handle.net/1853/45601 | |
| dc.language.iso | en_US | en_US |
| dc.publisher | Georgia Institute of Technology | en_US |
| dc.publisher.original | American Institute of Physics | en_US |
| dc.subject | Chromium | en_US |
| dc.subject | Silicon | en_US |
| dc.subject | Elemental semiconductors | en_US |
| dc.subject | Interface structure | en_US |
| dc.subject | Thermal conductivity | en_US |
| dc.subject | Semiconductor-metal boundaries | en_US |
| dc.subject | Metallic thin films | en_US |
| dc.subject | Semiconductor thin films | en_US |
| dc.subject | Mixing | en_US |
| dc.title | Role of interface disorder on thermal boundary conductance using a virtual crystal approach | en_US |
| dc.type | Text | |
| dc.type.genre | Article | |
| dspace.entity.type | Publication | |
| local.contributor.author | Graham, Samuel | |
| local.contributor.corporatename | Center for Organic Photonics and Electronics | |
| relation.isAuthorOfPublication | cf62405d-2133-40a8-b046-bce4a3443381 | |
| relation.isOrgUnitOfPublication | 43f8dc5f-0678-4f07-b44a-edbf587c338f |
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