Title:
Avalanche Photodiode Having Edge Breakdown Suppression

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dc.contributor.patentcreator Haralson, Joe N.
dc.contributor.patentcreator Brennan, Kevin F.
dc.date.accessioned 2017-05-12T14:27:43Z
dc.date.available 2017-05-12T14:27:43Z
dc.date.filed 4/17/2000
dc.date.issued 3/19/2002
dc.description.abstract The present disclosure relates to an avalanche photodiode having edge breakdown suppression. The photodiode comprises a p contact and an n contact, as well as a plurality of device layers disposed between the p contact and the n contact. The device layers include, in order from the p contact to the n contact, a primary well, a decoupler layer, a multiplication layer, a charge sheet, an absorption layer, and a substrate. The layers are constructed so as to have particular volumes of charge which affects the order in which they deplete. With the preferred order of depletion, the multiplication layer will deplete before the decoupler layer and the decoupler layer will deplete before the charge sheet when a negative bias is applied to the avalanche photodiode. This results in a joint opening effect within the avalanche photodiode which effectively suppresses edge breakdown.
dc.description.assignee Georgia Tech Research Corporation
dc.identifier.cpc H01L31/107
dc.identifier.cpc H01L31/1844
dc.identifier.cpc Y02E10/544
dc.identifier.patentapplicationnumber 09/550437
dc.identifier.patentnumber 6359322
dc.identifier.uri http://hdl.handle.net/1853/57416
dc.identifier.uspc 257/438
dc.title Avalanche Photodiode Having Edge Breakdown Suppression
dc.type Text
dc.type.genre Patent
dspace.entity.type Publication
local.contributor.corporatename Georgia Institute of Technology
local.relation.ispartofseries Georgia Tech Patents
relation.isOrgUnitOfPublication cc30e153-7a64-4ae2-9b1d-5436686785e3
relation.isSeriesOfPublication 0f49c79d-4efb-4bd9-b060-5c7f9191b9da
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