Title:
Radiation analysis of SiGe HBT devices and circuits

dc.contributor.author Cressler, John D. en_US
dc.contributor.corporatename Georgia Institute of Technology. Office of Sponsored Programs en_US
dc.contributor.corporatename Georgia Institute of Technology. School of Electrical and Computer Engineering en_US
dc.contributor.corporatename Georgia Institute of Technology. Office of Sponsored Programs
dc.date.accessioned 2011-10-24T18:05:21Z
dc.date.available 2011-10-24T18:05:21Z
dc.date.issued 2010-09-01 en_US
dc.description Issued as final report en_US
dc.description.sponsorship United States. National Aeronautics and Space Administration en_US
dc.identifier.other 10496 en_US
dc.identifier.uri http://hdl.handle.net/1853/41872
dc.publisher Georgia Institute of Technology en_US
dc.relation.ispartofseries School of Electrical and Computer Engineering ; Project no. 113033 en_US
dc.subject.lcsh Heterojunctions
dc.subject.lcsh Bipolar integrated circuits
dc.subject.lcsh Bipolar transistors
dc.subject.lcsh Integrated circuits
dc.subject.lcsh Thick films
dc.title Radiation analysis of SiGe HBT devices and circuits en_US
dc.title.alternative Radiation effects and analysis of SiGe HBT devices and circuits en_US
dc.type Text
dc.type.genre Technical Report
dspace.entity.type Publication
local.contributor.author Cressler, John D.
local.contributor.corporatename School of Electrical and Computer Engineering
local.contributor.corporatename College of Engineering
local.contributor.corporatename Office of Sponsored Programs
local.relation.ispartofseries OSP Final Research Reports
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