Title:
Inverse-mode Bipolar Transistor Radio-frequency Switches And Methods Of Using Same

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dc.contributor.patentcreator Madan, Anuj
dc.contributor.patentcreator Cressler, John D.
dc.date.accessioned 2017-05-12T14:26:05Z
dc.date.available 2017-05-12T14:26:05Z
dc.date.filed 4/8/2011
dc.date.issued 7/30/2013
dc.description.abstract The various embodiments of the present disclosure relate generally to inverse-mode Radio-Frequency (�RF�) switching circuits and methods of using the same. An embodiment of the present invention provides an inverse-mode RF switching circuit. The inverse-mode RF switching circuit comprises a bipolar transistor, a shunt element, a first RF channel, and a second RF channel. The bipolar transistor comprises a base, a collector, and an emitter, wherein the base and emitter are in electrical communication first via a base-emitter junction and second via an electrical connection element. The shunt element is in electrical communication with the collector. The first RF channel is in electrical communication with the base and emitter. The second RF channel is in electrical communication with the collector and the shunt element. The base-collector junction operates as a switching diode between the first RF channel and the second RF channel.
dc.description.assignee Georgia Tech Research Corporation
dc.identifier.cpc H03K17/74
dc.identifier.cpc H03K17/60
dc.identifier.patentapplicationnumber 13/082450
dc.identifier.patentnumber 8498576
dc.identifier.uri http://hdl.handle.net/1853/56788
dc.identifier.uspc 455/63.3
dc.title Inverse-mode Bipolar Transistor Radio-frequency Switches And Methods Of Using Same
dc.type Text
dc.type.genre Patent
dspace.entity.type Publication
local.contributor.corporatename Georgia Institute of Technology
local.relation.ispartofseries Georgia Tech Patents
relation.isOrgUnitOfPublication cc30e153-7a64-4ae2-9b1d-5436686785e3
relation.isSeriesOfPublication 0f49c79d-4efb-4bd9-b060-5c7f9191b9da
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