Self-Doping Contacts and Associated Silicon Solar Cell Structures

Meier, D. L.; Davis, H. P.; Shibata, A.; Abe, T.; Kinoshita, K.; Bishop, C.; Mahajan, S.; Rohatgi, Ajeet; Doshi, P.; Finnegan, M.

Title:

Self-Doping Contacts and Associated Silicon Solar Cell Structures

dc.contributor.author	Meier, D. L.
dc.contributor.author	Davis, H. P.
dc.contributor.author	Shibata, A.
dc.contributor.author	Abe, T.
dc.contributor.author	Kinoshita, K.
dc.contributor.author	Bishop, C.
dc.contributor.author	Mahajan, S.
dc.contributor.author	Rohatgi, Ajeet
dc.contributor.author	Doshi, P.
dc.contributor.author	Finnegan, M.
dc.contributor.corporatename	Georgia Institute of Technology. University Center of Excellence for Photovoltaic Research and Education
dc.contributor.corporatename	EBARA Solar, Inc.
dc.contributor.corporatename	EBARA RESEARCH Co. Ltd. Center for Electrophysics
dc.contributor.corporatename	Carnegie-Mellon University. Dept. of Materials Science and Engineering
dc.date.accessioned	2008-12-18T19:02:14Z
dc.date.available	2008-12-18T19:02:14Z
dc.date.issued	1998-07
dc.description	Presented at the 2nd World Conference on Photovoltaic Solar Energy Conversion; Vienna, Austria; July 6-10, 1998.	en
dc.description.abstract	Contacts to <111> Si which are self-doping and self-aligning were investigated. Such contacts are applicable both to conventional cell structures as selective emitters and to more demanding structures such as interdigitated back contact cells. Emphasis was placed on alloyed contacts of AI for providing a self-doping p-type contact and of Ag-Sb for a self-doping n-type contact. Alloying at 900°C of 1.1% (wt.) Sb in Ag doped Si to a value of 2 x 10 (18) Sb/cm(3), suggesting a 5% (wt.) Sb is needed for ohmic contact. An AI alloy p-n junction was found to be suitable for a solar cell if placed at the back of the cell, with 13.2% efficiency and good IQE demonstrated for a fully screen-printed dendritic web cell. A prototype interdigitated back contact cell was fabricated by screen printing (AI and Ag) with tight alignment (100 11m lines and spaces) on a dendritic web substrate with an efficiency of 10.4%.	en
dc.identifier.uri	http://hdl.handle.net/1853/26254
dc.language.iso	en_US	en
dc.publisher	Georgia Institute of Technology	en
dc.subject	Rapid thermal processing	en
dc.subject	Solar cells	en
dc.subject	Silicon solar cells	en
dc.title	Self-Doping Contacts and Associated Silicon Solar Cell Structures	en
dc.type	Text
dc.type.genre	Proceedings
dspace.entity.type	Publication
local.contributor.author	Rohatgi, Ajeet
local.contributor.corporatename	School of Electrical and Computer Engineering
local.contributor.corporatename	College of Engineering
local.contributor.corporatename	University Center of Excellence for Photovoltaics
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