Title:
Capacitive Microaccelerometers And Fabrication Methods
Capacitive Microaccelerometers And Fabrication Methods
dc.contributor.patentcreator | Ayazi, Farrokh | |
dc.contributor.patentcreator | Amini, Babak Vakili | |
dc.contributor.patentcreator | Abdolvand, Reza | |
dc.date.accessioned | 2017-05-12T14:28:29Z | |
dc.date.available | 2017-05-12T14:28:29Z | |
dc.date.filed | 6/1/2006 | |
dc.date.issued | 3/4/2008 | |
dc.description.abstract | Disclosed are moveable microstructures comprising in-plane capacitive microaccelerometers, with submicro-gravity resolution ( <200 ng/ √Hz) and very high sensitivity (17 pF/g). The microstructures are fabricated in thick (>100 μm) silicon-on-insulator (SOI) substrates or silicon substrates using a two-mask fully-dry release process that provides large seismic mass (>10 milli-g), reduced capacitive gaps, and reduced in-plane stiffness. Fabricated devices may be interfaced to a high resolution switched-capacitor CMOS IC that eliminates the need for area-consuming reference capacitors. The measured sensitivity is 83 mV/mg (17 pF/g) and the output noise floor is -91 dBm/Hz at 10 Hz (corresponding to an acceleration resolution of 170 ng/√Hz). The IC consumes 6 mW power and measures 0.65 mm² core area. | |
dc.description.assignee | Georgia Tech Research Corp. | |
dc.identifier.cpc | B81C1/00182 | |
dc.identifier.cpc | G01P15/0802 | |
dc.identifier.cpc | G01P15/125 | |
dc.identifier.patentapplicationnumber | 11/444723 | |
dc.identifier.patentnumber | 7337671 | |
dc.identifier.uri | http://hdl.handle.net/1853/57725 | |
dc.identifier.uspc | 73/514.32 | |
dc.title | Capacitive Microaccelerometers And Fabrication Methods | |
dc.type | Text | |
dc.type.genre | Patent | |
dspace.entity.type | Publication | |
local.contributor.corporatename | Georgia Institute of Technology | |
local.relation.ispartofseries | Georgia Tech Patents | |
relation.isOrgUnitOfPublication | cc30e153-7a64-4ae2-9b1d-5436686785e3 | |
relation.isSeriesOfPublication | 0f49c79d-4efb-4bd9-b060-5c7f9191b9da |
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