Title:
Capacitive Microaccelerometers And Fabrication Methods

dc.contributor.patentcreator Ayazi, Farrokh
dc.contributor.patentcreator Amini, Babak Vakili
dc.contributor.patentcreator Abdolvand, Reza
dc.date.accessioned 2017-05-12T14:28:29Z
dc.date.available 2017-05-12T14:28:29Z
dc.date.filed 6/1/2006
dc.date.issued 3/4/2008
dc.description.abstract Disclosed are moveable microstructures comprising in-plane capacitive microaccelerometers, with submicro-gravity resolution ( <200 ng/ √Hz) and very high sensitivity (17 pF/g). The microstructures are fabricated in thick (>100 μm) silicon-on-insulator (SOI) substrates or silicon substrates using a two-mask fully-dry release process that provides large seismic mass (>10 milli-g), reduced capacitive gaps, and reduced in-plane stiffness. Fabricated devices may be interfaced to a high resolution switched-capacitor CMOS IC that eliminates the need for area-consuming reference capacitors. The measured sensitivity is 83 mV/mg (17 pF/g) and the output noise floor is -91 dBm/Hz at 10 Hz (corresponding to an acceleration resolution of 170 ng/√Hz). The IC consumes 6 mW power and measures 0.65 mm² core area.
dc.description.assignee Georgia Tech Research Corp.
dc.identifier.cpc B81C1/00182
dc.identifier.cpc G01P15/0802
dc.identifier.cpc G01P15/125
dc.identifier.patentapplicationnumber 11/444723
dc.identifier.patentnumber 7337671
dc.identifier.uri http://hdl.handle.net/1853/57725
dc.identifier.uspc 73/514.32
dc.title Capacitive Microaccelerometers And Fabrication Methods
dc.type Text
dc.type.genre Patent
dspace.entity.type Publication
local.contributor.corporatename Georgia Institute of Technology
local.relation.ispartofseries Georgia Tech Patents
relation.isOrgUnitOfPublication cc30e153-7a64-4ae2-9b1d-5436686785e3
relation.isSeriesOfPublication 0f49c79d-4efb-4bd9-b060-5c7f9191b9da
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