Person:

Kohl, Paul A.

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https://hdl.handle.net/1853/71414

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Organizational Unit

School of Chemical and Biomolecular Engineering

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Now showing 1 - 9 of 9

Improved Mechanical Properties of Chemically Amplified, Positive Tone, Polynorbornene Dielectric

(Georgia Institute of Technology, 2014-12) Schwartz, Jared M. ; Sutlief, Alexandra E. ; Kohl, Paul A. ; Mueller, Brennen K.

The mechanical properties of an aqueous developed, chemically amplified, polynorbornene-based permanent dielectric have been investigated. The previously reported hexafluoroisopropanol norbornene and tert-butyl ester norbornene copolymer has been modified via two routes to improve the mechanical properties of the polymer and enable thick-film deposition. First, a third monomer, butyl norbornene (ButylNB) was added to the polymer backbone. The inclusion of 24 mol% ButylNB lowered the elastic modulus from 2.64 to 2.35 GPa and raised the dielectric constant from 2.78 to 3.48. The second approach added a lowmolecular weight, plasticizing additive in the copolymer formulation. Many additives were immiscible with the resin or did not affect the mechanical properties. Trimethyololpropane ethoxylate (TMPEO) was found to be a miscible additive that improved mechanical properties and could participate in crosslinking the final dielectric material. TMPEO interacted with the PAG, lowering its decomposition temperature. An optimal formulation and processing scheme were determined. A formulation with 10 pphr TMPEO was measured to have a dielectric constant of 2.94, an elastic modulus of 1.95 GPa, a sensitivity at 365 nm of 175 mJ/cm2, and a contrast of 4.36.
Positive Tone, Polynorbornene Dielectric Crosslinking

(Georgia Institute of Technology, 2014-05) Schwartz, Jared M. ; Mueller, Brennen K. ; Elce, Edmund ; Pritchard, Zachary D. ; Li, Helen W. ; Grillo, Angelica M. ; Lee, Sang Y. ; Kohl, Paul A.

The processing and properties of a positive-tone, aqueous develop, epoxy crosslinked permanent dielectric based on a polynorbornene (PNB) backbone and bis(diazonaphthoquinone) (DNQ) photosensitive compound were investigated. The developing and cure properties of the films were studied as a function of cure temperature, epoxy crosslinker loading and DNQ loading. Reduced modulus measurements showed that crosslinking of the polymer film occurred via reaction of the polymer with DNQ. The final modulus of the DNQ-crosslinked film was 4.0 GPa. Swelling measurements for a UV exposed film showed material leaching from the film. Residual solvent from swelling measurements was analysed by gel permeation chromatography which showed the indene carboxylic acid form of DNQ leached out of the polymer film. The unexposed film did not exhibit material loss through leaching. When developed, films showed a decline in modulus to 2.6 GPa, likely due to the reaction of DNQ with the aqueous base developer forming nonreactive byproducts that did not contribute to crosslinking. An epoxy crosslinker was added to the formulation which helped crosslink the polymer film by inhibiting uptake of the aqueous base during developing. The epoxy inhibition of the base uptake was confirmed by quartz crystal microbalance, where an increase in epoxy loading led to a decrease in base uptake of the film during developing. 19F-NMR results support the DNQ-PNB crosslinking through esterification. Electrical characterization of the cured PNB films showed a relative dielectric constant of 3.65 for a DNQ and epoxy containing film after curing at 220◦C.
Chemically Amplified, Positive Tone, Polynorbornene Dielectric for Microelectronics Packaging

(Georgia Institute of Technology, 2014-05) Mueller, Brennen K. ; Schwartz, Jared M. ; Sutlief, Alexandra E. ; Bell, William K. ; Hayes, Colin O. ; Elce, Edmund ; Willson, C. Grant ; Kohl, Paul A.

A low permittivity, positive tone, polynorbornene dielectric has been developed that exhibits excellent lithographic and electrical properties. The polymer resin is a random copolymer of a norbornene hexafluoroalcohol (NBHFA) and a norbornene tert-butyl ester (NBTBE). High optical sensitivity and contrast were achieved using a chemically amplified solubility switching mechanism through the acid-catalyzed deprotection of the tert-butyl ester functionality. After developing in aqueous base, the film was thermally cured through a Fischer esterification reaction, resulting in a cross-linked permanent dielectric. The effect of the photoacid generator (PAG) concentration on the lithographic patterning and curing reactions was studied. Higher PAG loading was favorable for both sensitivity and dielectric constant. The sensitivity of a formulation was measured as low as 8.09 mJ/cm2. The molar ratio of the two monomers composing the polymer was varied. A higher NBHFA content was favorable because it resulted in a lower modulus, lower shrinkage, and lower dielectric constant and loss. A formulation with 70 mol% of the NBHFA had a modulus of 2.60 GPa, a 12.2% volume decrease during cure, and a dielectric constant of 2.23. The direction-dependent coefficient of thermal expansion was measured, and it was found that the anisotropy of the PNB films decreased with higher NBTBE content.
Rapid curing of positive tone photosensitive polybenzoxazole based dielectric resin by variable frequency microwave processing

(Georgia Institute of Technology, 2006-06) Tanikella, Ravindra V. ; Sung, Taehyun ; Bidstrup-Allen, Sue Ann ; Kohl, Paul A.

High performance polymer dielectrics such as polyimides and polybenzoxazoles are used for several applications in the semiconductor industry due to their excellent dielectric and thermomechanical properties. However, these materials require curing at high temperatures for long periods of time in order to achieve the desired properties. High temperature exposure for long periods of time can be detrimental to device characteristics and reliability. In this study, rapid low temperature curing of a positive tone photosensitive polybenzoxazole based dielectric resin by variable frequency microwave (VFM) processing was investigated. The chemical changes occurring in the film during the condensation reaction and the percent conversion achieved as a function of cure condition were monitored by Fourier transform infrared spectroscopy. The effectiveness of rapid VFM curing was studied by characterizing the optical, electrical, and thermomechanical properties of VFM cured films with thermally cured films. The thermal stability of cured films was investigated by thermal gravitational analysis (TGA) and mass spectrometry (MS) studies. The results showed that a higher percent conversion and higher thermal stability can be achieved by using VFM processing than can be obtained using conventional thermal curing at the same cure temperature. However, the complete removal of photopackage related residual products requires slow ramp rates and long cure times.
Polylithic integration of electrical and optical interconnect technologies for gigascale fiber-to-the-chip communication

(Georgia Institute of Technology, 2005-08) Mule’, Anthony V. ; Villalaz, Ricardo A. ; Joseph, Paul Jayachandran ; Naeemi, Azad ; Kohl, Paul A. ; Gaylord, Thomas K. ; Meindl, James D.

Polylithic integration of electrical and optical interconnect technologies is presented as a solution for merging silicon CMOS and compound semiconductor optoelectronics. In contrast to monolithic and hybrid integration technologies, polylithic integration allows for the elimination of optoelectronic and integrated optic device-related processing from silicon CMOS manufacturing. Printed wiring board-level and compound semiconductor chip-level waveguides terminated with volume grating couplers facilitate bidirectional optical communication, where fiber-to-board and board-to-chip optical coupling occurs through a two-grating (or grating-to-grating) coupling path. A 27% increase in the electrical signal I/O projected by and 33% increase in the number of substrate-level electrical signal interconnect layers implied by the International Technology Roadmap for Semiconductors (ITRS) projections for the 32-nm technology generation are required to facilitate 10 Tb/s aggregate bidirectional fiber-to-the-chip communication. Buried air-gap channels provide for the routing of chip or board-level encapsulated air-clad waveguides for minimum crosstalk and maximum interconnect density. Optical signals routed on-board communicate with on-chip volume grating couplers embedded as part of a wafer-level batch package technology exhibiting compatible electrical and optical input/output interconnects. Measurements of grating-to-grating coupling reveal 31% coupling efficiency between two slab, nonoptimized, nonfocusing volume grating couplers.
Next-generation microvia and global wiring technologies for SOP

(Georgia Institute of Technology, 2004-05) Sundaram, Venky ; Tummala, Rao R. ; Liu, Fuhan ; Kohl, Paul A. ; Li, Jun ; Bidstrup-Allen, Sue Ann ; Fukuoka, Yoshitaka

As microsystems continue to move toward higher speed and microminiaturization, the demand for interconnection density both on the IC and the package levels increases tremendously. The 2002 ITRS roadmap update identifies the need for sub-100-µm area array pitch and data rates of 10 Gb/s in the package or board by the year 2010, requiring much finer lines and vias than the current microvias of 50 µm diameter and lines and spaces of 25 µm. After a brief description of the future need for high-density substrates, the historical evolution of microvia technologies worldwide is summarized. With the move toward highly integrated and higher performance system-on-a-package (SOP) technology, the demand for microvia wiring density in the package is increasing dramatically requiring new innovations in fine line, ultralow-loss, and ultrathin-film dielectrics. The low-cost needs of this technology are driving research in high throughput and large area processes in dielectric and conductor deposition. The third section of this paper describes in detail some of the key emerging global microvia research and development in the fabrication of microminiaturized, multifunction SOP packages including rapid curing of low-loss dielectric thin films on organic substrates, environmentally friendly high-speed electroless copper plating, ultrafine lines, and spaces down to 5 µm and low-cost stacked via structures without chemical-mechanical polishing. This paper concludes with a perspective on future directions in dielectrics and conductor materials and processes leading to ultrahigh-density and low-cost microvia technologies for build-up SOP implementation.
Fabrication of microchannels using polynorbornene photosensitive sacrificial materials

(Georgia Institute of Technology, 2003-09) Wu, X. Q. ; Reed, H. A. ; Wang, Y. ; Rhodes, L. F. ; Elce, E. ; Ravikiran, R. ; Shick, R. A. ; Henderson, Clifford L. ; Allen, S. A. B. ; Kohl, Paul A.

A processing method has been demonstrated for the fabrication of microchannels using photosensitive polynorbornene copolymer based sacrificial materials. The channel geometric patterns of sacrificial polymer were made via photolithography. The sacrificial polymer patterns were encapsulated with a dielectric medium and then thermally decomposed to form air channels. For the thermal decomposition of sacrificial polymer, the heating program was determined on the basis of the kinetic model obtained from thermogravimetric analysis to maintain the decomposition at a constant rate. The results indicate that a properly selected heating program can avoid the deformation in the channel structure; at the same conditions, a large-size channel is more easily deformed than a small one. The tapered-structure microchannels were also produced using a gray-scale mask. The result shows that a suitably low contrast for the photosensitive sacrificial material can lead to smooth and tapered microchannels.
Chip-to-Module Interconnections Using "Sea of Leads" Technology

(Georgia Institute of Technology, 2003-01) Bakir, Muhannad S. ; Reed, Hollie A. ; Mulé, Anthony V. ; Jayachandran, Joseph Paul ; Kohl, Paul A. ; Martin, Kevin P. ; Gaylord, Thomas K. ; Meindl, James D.

The drive toward higher density and higher performance in integrated circuits creates a need to keep interconnects short and eliminate layers of packaging. In this article, we propose a novel, ultrahigh-density (exceeding 10⁴leads per cm²), compliant, wafer-level, input/output interconnection technology called "sea of leads" as a key enabling technology for future high-performance microsystems. The mechanical compliance is addressed through slippery leads (leads released from the surface) and embedded air gaps.The ability to fabricate embedded air gaps has enabled the integration of optical interconnects with high index-of-refraction mismatches between the core and cladding.
Low k, Porous Methyl Silsesquioxane and Spin-On-Glass

(Georgia Institute of Technology, 1999) Kohl, Abbe T. ; Mimna, Richard ; Shick, Robert ; Rhodes, Larry ; Wang, Z. L. (Zhong Lin) ; Kohl, Paul A.

Low dielectric constant, porous silica was made from commercially available methyl silsesquioxane (MSQ) by the addition of a sacrificial polymer, substituted norbornene polymer containing triethoxysilyl groups (NB), to the MSQ. The silsesquioxane-NB polymer film mixture was thermally cured followed by decomposition of the NB at temperatures above 400°C. The dielectric constant of the MSQ was lowered from 2.7 to 2.3 by creating 70 nm pores in the MSQ. The voids created in the MSQ exhibited a closed-pore structure. The concentration of NB in the MSQ affected the number of pores but not their size. Porous films were also created in a methyl siloxane spin-on-glass and its dielectric constant was lowered from 3.1 to 2.7. Infrared spectroscopy was used to follow the curing of the MSQ and decomposition of the NB.