Person:
Kohl, Paul A.

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Now showing 1 - 4 of 4
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    Improved Mechanical Properties of Chemically Amplified, Positive Tone, Polynorbornene Dielectric
    (Georgia Institute of Technology, 2014-12) Schwartz, Jared M. ; Sutlief, Alexandra E. ; Kohl, Paul A. ; Mueller, Brennen K.
    The mechanical properties of an aqueous developed, chemically amplified, polynorbornene-based permanent dielectric have been investigated. The previously reported hexafluoroisopropanol norbornene and tert-butyl ester norbornene copolymer has been modified via two routes to improve the mechanical properties of the polymer and enable thick-film deposition. First, a third monomer, butyl norbornene (ButylNB) was added to the polymer backbone. The inclusion of 24 mol% ButylNB lowered the elastic modulus from 2.64 to 2.35 GPa and raised the dielectric constant from 2.78 to 3.48. The second approach added a lowmolecular weight, plasticizing additive in the copolymer formulation. Many additives were immiscible with the resin or did not affect the mechanical properties. Trimethyololpropane ethoxylate (TMPEO) was found to be a miscible additive that improved mechanical properties and could participate in crosslinking the final dielectric material. TMPEO interacted with the PAG, lowering its decomposition temperature. An optimal formulation and processing scheme were determined. A formulation with 10 pphr TMPEO was measured to have a dielectric constant of 2.94, an elastic modulus of 1.95 GPa, a sensitivity at 365 nm of 175 mJ/cm2, and a contrast of 4.36.
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    Positive Tone, Polynorbornene Dielectric Crosslinking
    (Georgia Institute of Technology, 2014-05) Schwartz, Jared M. ; Mueller, Brennen K. ; Elce, Edmund ; Pritchard, Zachary D. ; Li, Helen W. ; Grillo, Angelica M. ; Lee, Sang Y. ; Kohl, Paul A.
    The processing and properties of a positive-tone, aqueous develop, epoxy crosslinked permanent dielectric based on a polynorbornene (PNB) backbone and bis(diazonaphthoquinone) (DNQ) photosensitive compound were investigated. The developing and cure properties of the films were studied as a function of cure temperature, epoxy crosslinker loading and DNQ loading. Reduced modulus measurements showed that crosslinking of the polymer film occurred via reaction of the polymer with DNQ. The final modulus of the DNQ-crosslinked film was 4.0 GPa. Swelling measurements for a UV exposed film showed material leaching from the film. Residual solvent from swelling measurements was analysed by gel permeation chromatography which showed the indene carboxylic acid form of DNQ leached out of the polymer film. The unexposed film did not exhibit material loss through leaching. When developed, films showed a decline in modulus to 2.6 GPa, likely due to the reaction of DNQ with the aqueous base developer forming nonreactive byproducts that did not contribute to crosslinking. An epoxy crosslinker was added to the formulation which helped crosslink the polymer film by inhibiting uptake of the aqueous base during developing. The epoxy inhibition of the base uptake was confirmed by quartz crystal microbalance, where an increase in epoxy loading led to a decrease in base uptake of the film during developing. 19F-NMR results support the DNQ-PNB crosslinking through esterification. Electrical characterization of the cured PNB films showed a relative dielectric constant of 3.65 for a DNQ and epoxy containing film after curing at 220◦C.
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    Chemically Amplified, Positive Tone, Polynorbornene Dielectric for Microelectronics Packaging
    (Georgia Institute of Technology, 2014-05) Mueller, Brennen K. ; Schwartz, Jared M. ; Sutlief, Alexandra E. ; Bell, William K. ; Hayes, Colin O. ; Elce, Edmund ; Willson, C. Grant ; Kohl, Paul A.
    A low permittivity, positive tone, polynorbornene dielectric has been developed that exhibits excellent lithographic and electrical properties. The polymer resin is a random copolymer of a norbornene hexafluoroalcohol (NBHFA) and a norbornene tert-butyl ester (NBTBE). High optical sensitivity and contrast were achieved using a chemically amplified solubility switching mechanism through the acid-catalyzed deprotection of the tert-butyl ester functionality. After developing in aqueous base, the film was thermally cured through a Fischer esterification reaction, resulting in a cross-linked permanent dielectric. The effect of the photoacid generator (PAG) concentration on the lithographic patterning and curing reactions was studied. Higher PAG loading was favorable for both sensitivity and dielectric constant. The sensitivity of a formulation was measured as low as 8.09 mJ/cm2. The molar ratio of the two monomers composing the polymer was varied. A higher NBHFA content was favorable because it resulted in a lower modulus, lower shrinkage, and lower dielectric constant and loss. A formulation with 70 mol% of the NBHFA had a modulus of 2.60 GPa, a 12.2% volume decrease during cure, and a dielectric constant of 2.23. The direction-dependent coefficient of thermal expansion was measured, and it was found that the anisotropy of the PNB films decreased with higher NBTBE content.
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    Low k, Porous Methyl Silsesquioxane and Spin-On-Glass
    (Georgia Institute of Technology, 1999) Kohl, Abbe T. ; Mimna, Richard ; Shick, Robert ; Rhodes, Larry ; Wang, Z. L. (Zhong Lin) ; Kohl, Paul A.
    Low dielectric constant, porous silica was made from commercially available methyl silsesquioxane (MSQ) by the addition of a sacrificial polymer, substituted norbornene polymer containing triethoxysilyl groups (NB), to the MSQ. The silsesquioxane-NB polymer film mixture was thermally cured followed by decomposition of the NB at temperatures above 400°C. The dielectric constant of the MSQ was lowered from 2.7 to 2.3 by creating 70 nm pores in the MSQ. The voids created in the MSQ exhibited a closed-pore structure. The concentration of NB in the MSQ affected the number of pores but not their size. Porous films were also created in a methyl siloxane spin-on-glass and its dielectric constant was lowered from 3.1 to 2.7. Infrared spectroscopy was used to follow the curing of the MSQ and decomposition of the NB.