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University Center of Excellence for Photovoltaics

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Author: Kim, Dong Seop × Author: Meemongkolkiat, Vichai × End date: 2005 × Start date: 2003 × Has files: Yes ×

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Record-High-Efficiency Solar Cells on Multicrystalline Materials Through Understanding and Implementation of RTP-Enhanced SiNx-induced Defect Hydrogenation

2004-01 , Rohatgi, Ajeet , Kim, Dong Seop , Yelundur, Vijay , Nakayashiki, Kenta , Upadhyaya, A. D. , Hilali, Mohamed M. , Meemongkolkiat, Vichai

This paper presents results on five record-high-efficiency 4 cm(2) solar cells on three different multicrystalline silicon materials through effective hydrogen passivation of bulk defects during cell processing. Silicon ribbon solar cell efficiencies of 18.2% and 17.9% were achieved on EFG and String Ribbon Si cells fabricated with photolithography front contacts, screen-printed Al-doped back surface field, and double layer anti-reflection coating. In addition, high-efficiency, screen-printed, manufacturable cells were achieved on HEM (16.9%), EFG (16.1%), and String Ribbon (15.9%) Si. It is found that proper implementation of a fast co-firing of front and back screen-printed contacts in a belt furnace can significantly enhance the bulk lifetime to ~100 μs and simultaneously produce high quality contacts with fill factors approaching 0.78. The firing process involves fast ramp-up and cooling rates to enhance PECVD SiN(x)-induced hydrogen passivation of defects and the quality of Al back surface field.

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String Ribbon Silicon Solar Cells with 17.8% Efficiency

2003-05 , Kim, Dong Seop , Gabor, A. M. , Yelundur, Vijay , Upadhyaya, A. D. , Meemongkolkiat, Vichai , Rohatgi, Ajeet

We have fabricated 4 cm(2) cells on String Ribbon Si wafers with efficiencies of 17.8% using a combination of laboratory and industrial processes. These are the most efficient String Ribbon devices made to date, demonstrating the high quality of the processed silicon and the future potential for industrial String Ribbon cells. Cofiring PECVD (Plasma Enhanced Chemical Vapor Deposition) silicon nitride (SiN(x)) and Al was used to boost the minority carrier lifetime of bulk Si. Photolithography front contacts were used to achieve low shading losses and low contact resistance with a good blue response. The firing temperature and time were studied with respect to the trade-off between hydrogen retention and aluminum back surface field (Al-BSF) formation. Bulk defect hydrogenation and deep Al-BSF formation took place in a very short time (~1 sec) at temperatures higher than 740 degrees C.

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