Record-High-Efficiency Solar Cells on Multicrystalline Materials Through Understanding and Implementation of RTP-Enhanced SiNx-induced Defect Hydrogenation
Author(s)
Kim, Dong Seop
Yelundur, Vijay
Nakayashiki, Kenta
Upadhyaya, A. D.
Hilali, Mohamed M.
Meemongkolkiat, Vichai
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Abstract
This paper presents results on five record-high-efficiency 4 cm(2) solar cells on three different multicrystalline silicon materials through effective hydrogen passivation of bulk defects during cell processing. Silicon ribbon solar cell efficiencies of 18.2% and 17.9% were achieved on EFG and String Ribbon Si cells fabricated with photolithography front contacts, screen-printed Al-doped back surface field, and double layer anti-reflection coating. In addition, high-efficiency, screen-printed, manufacturable cells were achieved on HEM (16.9%), EFG (16.1%), and String Ribbon (15.9%) Si. It is found that proper implementation of a fast co-firing of front and back screen-printed contacts in a belt furnace can significantly enhance the bulk lifetime to ~100 μs and simultaneously produce high quality contacts with fill factors approaching 0.78. The firing process involves fast ramp-up and cooling rates to enhance PECVD SiN(x)-induced hydrogen passivation of defects and the quality of Al back surface field.
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Date
2004-01
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