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University Center of Excellence for Photovoltaics

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Author: Kim, Dong Seop × Author: Meemongkolkiat, Vichai × Author: Nakayashiki, Kenta × search.filters.applied.f.isOrgUnitOfPublicationTitle: School of Electrical and Computer Engineering × Type: Text ×

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Investigation of Modified Screen-Printing Al Pastes For Local Back Surface Field Formation

2006-05 , Meemongkolkiat, Vichai , Nakayashiki, Kenta , Kim, Dong Seop , Kim, Steve , Shaikh, Aziz , Kuebelbeck, Armin , Stockum, Werner , Rohatgi, Ajeet

This paper reports on a low-cost screen-printing process to form a self-aligned local back surface field (LBSF) through dielectric rear surface passivation. The process involved formation of local openings through a dielectric (SiNx or stacked SiO(2)/SiN(x)) prior to full area Al screenprinting and a rapid firing. Conventional Al paste with glass frit degraded the SiN(x) surface passivation quality because of glass frit induced pinholes and etching of SiN(x) layer, and led to very thin LBSF regions. The same process with a fritless Al paste maintained the passivation quality of the SiN(x), but did not provide an acceptably thick and uniform LBSF. Al pastes containing appropriate additives gave better LBSF because of the formation of a thicker and more uniform Al-BSF region. However, they exhibited somewhat lower internal back surface reflectance (<90%) compared to conventional Al paste on SiN(x). More insight on these competing effects is provided by fabrication and analysis of complete solar cells.

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Record-High-Efficiency Solar Cells on Multicrystalline Materials Through Understanding and Implementation of RTP-Enhanced SiNx-induced Defect Hydrogenation

2004-01 , Rohatgi, Ajeet , Kim, Dong Seop , Yelundur, Vijay , Nakayashiki, Kenta , Upadhyaya, A. D. , Hilali, Mohamed M. , Meemongkolkiat, Vichai

This paper presents results on five record-high-efficiency 4 cm(2) solar cells on three different multicrystalline silicon materials through effective hydrogen passivation of bulk defects during cell processing. Silicon ribbon solar cell efficiencies of 18.2% and 17.9% were achieved on EFG and String Ribbon Si cells fabricated with photolithography front contacts, screen-printed Al-doped back surface field, and double layer anti-reflection coating. In addition, high-efficiency, screen-printed, manufacturable cells were achieved on HEM (16.9%), EFG (16.1%), and String Ribbon (15.9%) Si. It is found that proper implementation of a fast co-firing of front and back screen-printed contacts in a belt furnace can significantly enhance the bulk lifetime to ~100 μs and simultaneously produce high quality contacts with fill factors approaching 0.78. The firing process involves fast ramp-up and cooling rates to enhance PECVD SiN(x)-induced hydrogen passivation of defects and the quality of Al back surface field.

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