Person:
Kohl,
Paul A.
Kohl,
Paul A.
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ItemLow k, Porous Methyl Silsesquioxane and Spin-On-Glass(Georgia Institute of Technology, 1999) Kohl, Abbe T. ; Mimna, Richard ; Shick, Robert ; Rhodes, Larry ; Wang, Z. L. (Zhong Lin) ; Kohl, Paul A.Low dielectric constant, porous silica was made from commercially available methyl silsesquioxane (MSQ) by the addition of a sacrificial polymer, substituted norbornene polymer containing triethoxysilyl groups (NB), to the MSQ. The silsesquioxane-NB polymer film mixture was thermally cured followed by decomposition of the NB at temperatures above 400°C. The dielectric constant of the MSQ was lowered from 2.7 to 2.3 by creating 70 nm pores in the MSQ. The voids created in the MSQ exhibited a closed-pore structure. The concentration of NB in the MSQ affected the number of pores but not their size. Porous films were also created in a methyl siloxane spin-on-glass and its dielectric constant was lowered from 3.1 to 2.7. Infrared spectroscopy was used to follow the curing of the MSQ and decomposition of the NB.
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ItemCharacterization of polymer dielectrics fabricated using non-conventional(Georgia Institute of Technology, 1999) Kohl, Paul A.
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ItemHTS (High Temperature Superconductor) materials for advanced electronic applications(Georgia Institute of Technology, 1996) Kohl, Paul A.
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ItemLow dielectric constant insulators and gold metallization for GHz multi-chip modules(Georgia Institute of Technology, 1993) Kohl, Paul A.
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ItemLow temperature CVD reactor for silicon passivation(Georgia Institute of Technology, 1992) Kohl, Paul A.
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ItemLow temperature CVD reactor for silicon passivation(Georgia Institute of Technology, 1992) Kohl, Paul A.
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ItemHigh Temperature Superconductor multichip modules(Georgia Institute of Technology, 1991) Kohl, Paul A. ; Bidstrup-Allen, Sue Ann