Person:
Kohl, Paul A.

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ORCID
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Now showing 1 - 7 of 7
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Low k, Porous Methyl Silsesquioxane and Spin-On-Glass

1999 , Kohl, Abbe T. , Mimna, Richard , Shick, Robert , Rhodes, Larry , Wang, Z. L. (Zhong Lin) , Kohl, Paul A.

Low dielectric constant, porous silica was made from commercially available methyl silsesquioxane (MSQ) by the addition of a sacrificial polymer, substituted norbornene polymer containing triethoxysilyl groups (NB), to the MSQ. The silsesquioxane-NB polymer film mixture was thermally cured followed by decomposition of the NB at temperatures above 400°C. The dielectric constant of the MSQ was lowered from 2.7 to 2.3 by creating 70 nm pores in the MSQ. The voids created in the MSQ exhibited a closed-pore structure. The concentration of NB in the MSQ affected the number of pores but not their size. Porous films were also created in a methyl siloxane spin-on-glass and its dielectric constant was lowered from 3.1 to 2.7. Infrared spectroscopy was used to follow the curing of the MSQ and decomposition of the NB.

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Low dielectric constant insulators and gold metallization for GHz multi-chip modules

1993 , Kohl, Paul A.

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High Temperature Superconductor multichip modules

1991 , Kohl, Paul A. , Bidstrup-Allen, Sue Ann

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Characterization of polymer dielectrics fabricated using non-conventional

1999 , Kohl, Paul A.

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Low temperature CVD reactor for silicon passivation

1992 , Kohl, Paul A.

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HTS (High Temperature Superconductor) materials for advanced electronic applications

1996 , Kohl, Paul A.

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Low temperature CVD reactor for silicon passivation

1992 , Kohl, Paul A.