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Author: Bentley, J. × Author: Wang, Z. L. (Zhong Lin) × End date: 1999 × search.filters.applied.f.resourcesubtype: Proceedings ×

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Epitaxial growth of Pt(001) thin films on MgO(001) under oxidizing conditions

1993 , Cui, G. , Van Buskirk, P. C. , Zhang, J.Beetz, C. P., Jr. , Steinbeck, J. , Wang, Z. L. (Zhong Lin) , Bentley, J.

Epitaxial Pt(001) thin films have been grown on MgO(001) substrates using dc magnetron sputtering with an Ar/O₂ mixture at 700°C. The width (FWHM) of the rocking curve of the Pt(002) peak is between 0.16° and 0.20°, which is only 0.05° wider than that of the MgO (002) peak of the cleaved substrate. The film surface roughness is about 1 nm (rms) for a 240 nm thick Pt film. No grain structure could be observed using SEM. In contrast, the films deposited at 700 °C with pure Ar, have both Pt(111) and Pt(001) oriented growth, as shown by XRD Θ -2 Θ scans, with the Pt(111) peak having the largest intensity. BaTiO₃ epitaxial films have also been deposited on Pt(001)/MgO(001). The width (FWHM) of the rocking curve of the BaTiO₃(200) peak is 0.4°. The surface morphology of the epitaxial BaTiO₃(100) thin films on Pt(001)/MgO(001) is featureless. XRD pole figure measurements on PtIBaTiO₃/Pt trilayer shown a very good in-plane alignment of all layers. The epitaxial growth relationship was also confirmed by TEM electron diffraction and cross-section imaging. The Pt/BaTiO₃/Pt epitaxial trilayer could serve as a prototype for ferroelectric capacitors and may be able to improve the electrical properties of the capacitors.

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