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School of Materials Science and Engineering

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Now showing 1 - 3 of 3
  • Item
    Acoustics in nanotechnology: manipulation, device application and modeling
    (Georgia Institute of Technology, 2007-12-19) Buchine, Brent Alan
    Advancing the field of nanotechnology to incorporate the unique properties observed at the nanoscale into functional devices has become a major scientific thrust of the 21st century. New fabrication tools and assembly techniques are required to design and manufacture devices based on one-dimensional nanostructures. Three techniques for manipulating nanomaterials post-synthesis have been developed. Two of them involve direct contact manipulation through the utilization of a physical probe. The third uses optically generated surface acoustic waves to reproducibly control and assemble one-dimensional nanostructures into desired locations. The nature of the third technique is non-contact and limits contamination and defects from being introduced into a device by manipulation. While the effective manipulation of individual nanostructures into device components is important for building functional nanosystems, commercialization is limited by this one-device-at-a-time process. A new approach to nanostructure synthesis was also developed to site-specifically nucleate and grow nanowires between two electrodes. Integrating synthesis directly with prefabricated device architectures leads to the possible mass production of NEMS, MEMS and CMOS systems based upon one-dimensional nanomaterials. The above processes have been pursued to utilize piezoelectric ZnO nanobelts for applications in high frequency electronic filtering as well as biological and chemical sensing. The high quality, single crystal, faceted nature of these materials make them ideal candidates for studying their properties through the designs of a bulk acoustic resonator. The first ever piezoelectric bulk acoustic resonator based on bottom-up synthesized belts will be demonstrated. Initial results are promising and new designs are implemented to scale the device to sub-micron dimensions. Multiple models will be developed to assist with design and testing. Some of models presented will help verify experimental results while others will demonstrate some of the problems plaguing further investigations.
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    Transport Properties and Nanosensors of Oxide Nanowires and Nanobelts
    (Georgia Institute of Technology, 2007-10-29) Lao, Changshi
    ZnO is one of the most important materials for electronics, optoelectronics, piezoelectricity and optics. With a wide band gap of 3.37eV and an exiton binding energy of 60meV, ZnO 1D nanostructures exhibit promising properties in a lot of optical device applications. It is also an important piezoelectric material and has applications in a new category of nanodevices, nano-piezotronics. Demonstrated prototype of devices includes nanogenerators, piezoelectric-FET, and a series of evolutive devices based on the concept of nanogenerator. This is based on working principle of a semiconductor and piezoelectric coupled property. This thesis is about the growth, characterization and device fabrication of ZnO nanowires and nanobelts for sensors and UV detectors. First, the fundamental synthesis of ZnO nanostructurs is investigated, particularly polar surface dominated nanostructues, to illustrate the unique growth configurations of ZnO. Detail study in this part includes nanobelts, nanorings, nanocombs, nanonetworks, and nanodiskettes synthesis. Important factors in driving the nanostructure synthesis mechanism are analyzed, such as the chemical activities of different surface of ZnO and the polar surface dominated effects. Then, the devices fabricated methods using individual nanowires/nanobelts and their electrical transport properties were carefully characterized. In this part, dominant factors which are critical for nanobelt device performance are investigated, such as the contact properties, interface effects, and durability testing. Also, a metal doping method is studied to explore the controlling and modification of nanowire electric and optical properties. Further more, I will present the surface functionalization of nanobelt for largely improving its electrical, optoelectronic and chemical performance. Surface functionalization of nanobelts is proven to be an effective method in enhancing the semiconductor and metal contact. Piezoelectric field-effect transistors will be demonstrated as a powerful approach as chemical sensors. Finally, a technique is illustrated for functionalizing the surfaces of ZnO nanobelts for enhancing its UV sensitivity by over five orders of magnitude. This demonstrates an effective approach for fabricatiing ultrasensitive UV detectors. The research results presented in this thesis have made great contribution to the growth, device fabrication and novel applications of ZnO nanostructures for photonics, optoelectronics and sensors.
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    Oxide nanomaterials: synthesis, structure, properties and novel devices
    (Georgia Institute of Technology, 2007-06-22) Yang, Rusen
    One-dimensional and hierarchical nanostructures have acquired tremendous attention in the past decades due to their possible application. In spite of the rapid emergence of new morphologies, the underlying growth mechanism is still not well understood. The lack of effective p-type or n-type doping is another obstacle for many semiconducting nanomaterials. A deeper investigation into these structures and new methods to fabricate devices are of significant impact for nanoscience and nanotechnology. Motivated by a desire to understand the growth mechanism of nanostructures and investigate novel device fabrication method, the research described in this thesis carried out on the synthesis, characterization, and device fabrication of semiconducting nanostructures. The main focus of the research was on ZnO, SnO2, and Zn3P2 for their great capability for fundamental phenomena studying, promising applications in sensors and optoelectronics, and the potential generalization of results to other materials. Within this study the following goals have been achieved: 1) Improved understanding of polar-surface-induced growth mechanism in wurtzite-structured ZnO and generalization of this growth mechanism with the discovery and analysis of rutile ¨Cstructured SnO2, 2) observation of the significance of the transversal growth, which is usually ignored, in interpenetrative ZnO nanowires, 3) rational design and growth control over versatile nanostructures of ZnO and Zn3P2, and 4) conjunction of p-type Zn3P2 and n-type ZnO semiconducting nanostructures for device fabrications. The framework for the research is reviewed first in chapter 1. Chapter 2 gives the detailed experimental setup, synthesis procedure, and common growth mechanism for nanostructure growth. A detailed discussion on the growth of ZnO nanostructures in chapter 3 provides more insight into the polar-surface-induced growth, transversal growth, vapor-solid growth, and vapor-liquid-solid growth during the formation of nanostructures. Polar-surface-induced growth is also confirmed in the growth of SnO2 nanostructures, which is also included in chapter 2. Chapter 3 presents Zn3P2 nanostructures from the newly designed experiment setup and the device fabrication from ZnO and Zn3P2 crossed nanowires.