Actually you're right. I think stay for the kind introduction of the talking. You guys a little bit about my research today on producing a way for scale process for fabricating areas of an import of vices. So to give you guys a little bit of background in the meantime I know my pants are ridiculous but they're warm. So I see. OK So to give you guys a little bit of background the type of device I'm trying to produce here is what we call in engineering you know for device or knee and D. and these are nano pores that function as individually addressable devices on this is as opposed to a porous membrane such as the allies for separations I'm here we're talking about using individual nano pores. For example to send by a molecule such as D.N.A. and you can use D.N.A. as though the primary kind of applique application of this type of force throughout the stock and this is just an example of it in a kind of futuristic E.N.D. device where you would have a single man a portable to detect a lot of information about the D.N.A. right now where the main thing we're interested in that he's using the pores is kind of a culture counter for D.N.A.. And in other words extract information about the size or the length of the D.N.A. molecule. So we can use that we can use the Eye on a current through the port to measure the size information about the D.N.A. a little bit of background on this concept. Some of the earlier you know the devices in a pores for biological pores an example here is Alpha human lives in which is a self assembling have to mark Homer itself assembles in to look at violator and you know because of the self-assembly mechanism it's easy to us study in a lab and it's been done for you know probably the last few decades some issues with using alpha came lies in there or any protein based pores in soft stages that they're intrinsically unstable and you can really to fine tune the geometry like we can with our. Well I could actually just speak louder. So people move towards using these solid state pours in silicon. And here is kind of schematic of one of these poor that we're trying to produce and these have the advantages of being able to fine tune the poor size and length so that you're able to get better quality results from your family translocation data. So it's sort of the goals of my Ph D. research and what I'll be talking about in this presentation is developing this fabrication method for wafer scale fabrication of solid state nano pores and silicon and in the long term we want to use our devices to to extract information about the D.N.A. translocation events. So the fabrication that we've developed starts with the position of a low stress. So look on the tri layer using the C.B.D. on the back side and the thickness of this film is that's going to be the length of the poor at the final step. Our next step is to use electron beam of the pattern the surface of the wafer with with our pores and then to transfer the pattern to the silicon nitride and then do a back edge step which allows us to open up the actual film in which the pour lays And finally we can use atomic layer deposition of aluminum oxide or or other materials to fine tune the size of the force. So the advantage of this method is that it's fully wafer scalable and a lot of the methods in the literature some of them used some use did but basically there hasn't been one that demonstrates a way for full of these pores and that's what we're you know that's what we're doing here. So the first step. Using that election I mean with the you guys are probably familiar with this tool and I've worked a lot with Devon on this soil on their advantages over using fibber T.M. as that it's more controlled and then using a focused on being and over. T. is the same principle using electron beam to produce very small features. However a T.M. is not really a way for scalable machine. So using any B.L. the factors that influence the writers resolution are the type of resist you use and then the dose as well as proximity effects the features that are nearby each other the smallest poor I was able to produce using using A.B.L. was approximately eight and a meters in diameter which is very good. These are some images of of the poor in before transferring it to the actual film the silicon nitride And as you can see here this is one of our smaller pores. It's approximately ten meters or maybe even smaller in the C.P.. Before being transferred. They were able to produce four sizes all the way up to all the way up from ten to fifteen and going to about twenty or thirty and then getting even larger just by varying the dose. So to give you guys an idea of the size dependence on the position of the dose. I found that across my way for the poor size would actually very radially you know so I attributed this to the effect of the maybe a little bit non-uniformity in this during the skin coating. And that's what I believe caused some of these variances here and also we were able to get reproducible results and I did too. To way for is using identical process conditions and basically got very similar results able to tune the port size from about forty nanometers up to about fifty by varying the dose. The best results I ever got. And this is the process. I use now is by using a single shot of the electron beam pattern the poor and I was able to get the poor sizes down to the ten nanometer range by using a single shot of the dose as opposed to a smaller subfields of and it a larger overall feature size of course in this case the since it's a single shot the dose had to be cranked up quite a bit and this took a little bit of optimization but it was found to give the best results so that was all in the before transferring the pattern to the actual silicon nitride film. They do some images of the poor in the silicon nitride. And as you can tell they circular you know they were still able to get pretty small sizes This one's about fifteen or twenty nanometers This one's a thirty nine a metre range and this one is a similar size these are in different thickness films. These pores here. You must imagine that. In order to find these pours I had features around them to help me find them and so you know because of that they would receive some proximity effect dosing from the pattern in those larger features around them. However I was able to interpret the distance between these ports with the features around them and image some pores that were isolated in other words they didn't receive any proximity effect dosing and these features still look pretty good. They do need some dose optimization. But you can see here we get some deformities. You know a lot and elongation effect or some kind of rough edge of fact but we are able to optimize the dose to get a good a nice circular geometry. One of the test. I did on these poor is to check that they've gone all the way through the silicon nitride was do an A.F.M. test and I was able to to get a depth of over fifty nanometers in this case which indicates that the pores were successfully at all the way through the silicon nitride we do see a little bit of tapering which is common in the I.C.P. especially since it's so it's a one dimensional so there's no way for material to escape all that then coming back out the way that you're edging and so this kind of confirms that as well. So the final step is the back edge step so once we produce the poor in the silicon nitride we're confident that it's all the way through the silicon nitride we do a potassium hydroxide wedge and basically this is to expose the silicon nitrite free film so that we now just have the film with the pour in it and I'm just kind of showing a few examples here of the of the the thickness of the films and the the width of the windows that resulted in the low stress look a nice right is actually very stable. You see an example here with this is approximately thirty Micron window and this is a thirty minute mirror film and this is actually a film that's under twenty enemy. It's a it's it's free standing over you know a couple hundred microns which which really demonstrates. You know the strength of these films. These pictures are off the way for where. I had the whole way for done with this with these feature sizes and and this is kind of an optimization process we found that we were able to get good success rate of of these coming out a lot of times if you have too high of aspect ratio they'll break after the wedge. But we found that we were able to get a good. You know good throughput of good devices for using a fifteen animator film over approximately fifty micron windows so about a thousand one aspect ratio we're able to get you know over ninety percent yield which is great. So the final step in the process. I've already shown you that we can kind of find to the poor size by using the E.P.L. by itself. However we can fine tune the for size even more to get to the sub ten then a meter range by using atomic layer deposition. And this is this is the final step in the process and so far we've used aluminum oxide but there's no reason why we can't use silicone dioxide or or you know some other some other oxide. But just to show you an example here we were able to downsize the poor from the forty meter range actually to force from forty in a meter range down to approximately ten and and smaller and you can see the porous size string. The reason we start to lose contrasts is because I did these tests on pores where they hadn't been back at yet. So we start to lose some contracts there and also the the aluminum not so the aluminum oxide would fill in the bottom of the trench here but you can still clearly see that the walls are being coated and we're able to reduce the pore size in almost a nano scale using a D.. So I'd like to conclude with you know. Back then. I've shown you guys that we've been able to develop the way for scale process for producing these nano pores you see in the devices and using E.P.O. we're able to get poorest from you know smaller than one hundred meters fine tuned down to about ten to twenty nine meters. You know just to give you guys an idea some of the challenges in doing this is an optimized thing that the dose is the main thing. I'm also how you dial euro if you resist if you're using a C.P. then you have the option of diluting it with an assault and getting different they can. This is a resistive star from and and that's kind of a whole little balance along with the thickness of the silicon nitride film. And what we'd like to continue to do is is optimized the process. You know be able to get consistently higher yield and thinner films because the thinner the film is that means that the length of the poor is is going to be less which will give us better resolution in our measurements. And we like to characterize these poor as using conductance experiments so take individual individual pieces from the way for and and put them in a conducting solution and measure the you know the. You know the current through there to a cup confirm the size of the poor or the smallest restricted restriction within the core and finally to it to use these pores towards analyzing by a molecule such as D.N.A.. So I'd like to acknowledge the National Science Foundation and Sandia for helping fund this work and take any questions. If we use the circular geometry because well if you if you kind of look at D.N.A. from like a forward view. I mean it's. Nickel is kind of a well studied in the literature I mean it doesn't have any weird places for the D.N.A. to kind of get stuck against you know. So a lot of times when you see like simulation studies they'll use like a circular geometry. You know as we obviously want the pore size to be as small as it can be with the D.N.A. still passing through. So you know just that if you kind of look at a D.N.A. like this the way the strain is I mean it's kind of circular when you can kind of look at it you know that in three questions together on on wafer I mean we can we can make them really close. That's usually not the goal because we want to we want have one pour and be able to control that per pretty in a string going through it. So each of our devices we want to have just one of them but I mean it's it's easy to make a bunch of really close together that will approximate effect on each other but I mean that's something that we can optimize you know pretty easily. And I mean I've actually done that in some test runs I've made much of pores next to each other and been able to get them to you know be distinguished features like within you know one pore size of each other. So if you want to pour another one fifteen years away and they develop separately so I've seen that. Yeah that's it makes it difficult because the first step the deposition of the silicon nitride isn't such a high temperature. You know if you get that low stress film so right and right now we put the chip into a kind of macro scale chamber and you know for initial to. Yes there's no reason why we can't do that and you know get you know get initial results. Ideally would be great. You know start integrating other you know mechanisms on the chip itself and I've had some you know some ideas where you know I guess like you can use diamond electrodes of some literature. You know in that direction. But right now we're just you know we're just interested in getting these cores reproducibly and and then having individual individual chips putting them in our chamber of course in the future would be great to integrate you know electrodes right on the. Well so. So the thing is it's really it's really good with the you know going to regularly and like like ninety degrees. You know you don't want to do a whole lot of this kind of motion. You know I mean on it and you don't want to put it in flat because then you get the surface tension of the water. You know pulling on it. I did I showed you one image so all these edges are done in a wet solution. They're done in a big beaker with stirring and you know then I pull it out of the way for holder and you know I put away for is in the solution and I pull it out when we do our actual experiments it within the chamber will have little tiny stir bars on each side. Sometimes to help with that but they're not close enough to the membrane to cause an issue there but it's actually quite good mechanical strength as I showed you that one picture it's like almost ten thousand aspect ratio where it's it's free standing and it's survives that the way that. Well I think so. I think if we package it reasonably and you know it should be an issue. I wouldn't want to blow up the nitrogen gun and say that right now but you can run like it like the dryer you can. They're OK in an oven like a convection oven they're OK You know it's a lot like I said as long as it's in the airflow it's going this way you know that they do really well you know what that's a more. No that was just kind of see it. Actually you know it's like ways to make it to make that kind of aspect ratio. All we have to do is get to the film. So once we're to the film. You know we can use a device. So when I do my A.V. alive these alignment crosses when I do the bill and then when I do a backs I do a back side alignment step then I use the mask liner that does backside alignment and then when I. So when I want to do a. So so so I end up with some crosses on the side on the top side that I also watch and then when I go to do the back side alignments that on this mask down here. I have I also have a you know features that are aligned to the crosses too and then you know then they're all lined up there like my whole pattern is basically just a grid of of these poor is all across the way for they're all. You know it's a state like a straight grid. You know and then you know so it's pretty easy actually to do the online mode when you have something like that. Thank you very very. I do the backside on it before I do the back edge. So you know I do the backside alignment first right here and that's how I make the those backside holes and then back. You know back and curiosity. Just you know when you get good at it. An hour and a half. It depends on if you're if you have to take pictures on all of them then it takes a lot longer for the first thing you're all.