Title:
Comparison of radiation damage effects in organic and silicon photodetectors
Comparison of radiation damage effects in organic and silicon photodetectors
Author(s)
Inman, Jacob
Advisor(s)
Hertel, Nolan E.
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Abstract
Field deployment of radiation detectors for use in nuclear material verification and in portal monitors requires rugged systems capable of withstanding high fluences of mixed-field radiation. As the use of solid-state photodetectors (for use in scintillation light detection)
has grown in recent years, their ability to maintain performance under intense irradiation
has come into question. This study seeks to determine the amount of radiation damage that both silicon (the current solid-state standard device) and organic photodetectors can withstand while maintaining their performance. Using a high-activity radioactive source, samples were irradiated for several hours and then measured for changes in leakage current with varying bias voltage. In addition, MCNP models were developed for these experi-
ments in order to quantify the level of radiation damage and absorbed dose within each photodetector type. Results indicate that organic photodetectors show high resilience to radiation-induced damage and do not require time to self-anneal in order to return to pre-
irradiation performance levels, even under significantly higher dose rates than in silicon. Though silicon devices will self-anneal and recover roughly 50% of performance several
hours after irradiation is completed, significant and lasting impacts on leakage current were noted.
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Date Issued
2019-04-30
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