Title:
Nitride/zinc Oxide Based Light-emitting Diodes

Thumbnail Image
Author(s)
Authors
Advisor(s)
Advisor(s)
Editor(s)
Associated Organization(s)
Organizational Unit
Series
Supplementary to
Abstract
A light-emitting nitride/zinc oxide based compound semiconductor device of double heterostructure. The double-heterostructure includes a light-emitting layer formed of an Al_(1-x-y)In_(x)Ga_(y)N; 0<=x<1, 0<y<=1, and x+y=0.1 to 1 compound semiconductor doped an impurity. Single or multi quantum well light-emitting active layers Al_(1-x-y)In_(x)Ga_(y)N/GaN; 0<=x<1, 0<y<=1, and x+y=0.1 to 1 are positioned between p-type GaN and n-type ZnO substrates.
Sponsor
Date Issued
2/15/2011
Extent
Resource Type
Text
Resource Subtype
Patent
Rights Statement
Rights URI