Title:
Method And Apparatus For Low Energy Electron Enhanced Etching Of Substrates
Method And Apparatus For Low Energy Electron Enhanced Etching Of Substrates
Files
Author(s)
Advisor(s)
Editor(s)
Collections
Supplementary to
Permanent Link
Abstract
A method-of low-damage, anisotropic etching of substrates including mounting the substrate upon the anode in a DC plasma reactor and subjecting the substrate to a plasma of low-energy electrons and a species reactive with the substrate. An apparatus for conducting low-damage, anisotropic etching including a DC plasma reactor, a permeable wall hollow cold cathode, an anode, and means for mounting the substrate upon the anode.
Sponsor
Date Issued
2/22/2000
Extent
Resource Type
Text
Resource Subtype
Patent