Title:
Method And Apparatus For Low Energy Electron Enhanced Etching Of Substrates
Method And Apparatus For Low Energy Electron Enhanced Etching Of Substrates
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Abstract
A method of low-damage, anisotropic etching of substrates including mounting the substrate upon the anode in a DC plasma reactor and subjecting the substrate to a plasma of low-energy electrons and a species reactive with the substrate. An apparatus for conducting low-damage, anisotropic etching including a DC plasma reactor, a permeable wall hollow cold cathode, an anode, and means for mounting the substrate upon the anode.
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3/16/1999
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Patent