Title:
Low-voltage pentacene organic field-effect transistors with high-kappa HfO₂ gate dielectrics and high stability under bias stress

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Zhang, Xiaohong
Tiwari, Shree Prakash
Kim, Sung-Jin
Kippelen, Bernard
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Abstract
Low-voltage pentacene organic field-effect transistors are demonstrated (operating voltage of −3 V) with high-κ hafnium dioxide gate dielectrics grown by atomic layer deposition at 200 °C. A high hole mobility of 0.39 cm²/V s with low threshold voltage (<−0.5 V) and low subthreshold slope of 120 mV/dec is achieved with a HfO₂ dielectric layer modified with a phosphonic acid based treatment. A high value of 94.8 nF/V s is obtained for the product of mobility and capacitance density. The devices show excellent bias stress stability with or without the phosphonic acid at the HfO₂ gate dielectric surface.
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2009-12
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