Title:
Growth of Epitaxial BaTiO₃Thin Films at 600°C by Metalorganic Chemical Vapor Deposition

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Kaiser, D. L.
Vaudin, M. D.
Rotter, L. D.
Wang, Z. L. (Zhong Lin)
Cline, J. P.
Hwang, C. S.
Marinenko, R. B.
Gillen, J. G.
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Abstract
Metalorganic chemical vapor deposition (MOCVD) was used to deposit epitaxial BaTiO₃3 thin films on (100) MgO substrates at 600°C. The metalorganic precursors employed in the deposition experiments were hydrated Ba(thd)2 (thd = CIIH190 2) and titanium isopropoxide. The films were analyzed by means of transmittance spectroscopy, wavelength dispersive x-ray spectrometry, secondary ion mass spectrometry depth profiling, x-ray diffraction, high resolution transmission electron microscopy, selected area electron diffraction, nanoscale energy dispersive x-ray spectrometry and second harmonic generation measurements. There was no evidence for interdiffusion between the film and substrate. The x-ray and electron diffraction studies showed that the films were oriented with the a-axis normal to the substrate surface, whereas second harmonic generation measurements showed that the films had some c-axis character.
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1995
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