Title:
InP-based heterojunction bipolar transistors for high speed and RF power applications :
advanced emitter-base designs
InP-based heterojunction bipolar transistors for high speed and RF power applications :
advanced emitter-base designs
Authors
Yi, Changhyun
Authors
Advisors
Brown, April S.
Advisors
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Date Issued
2002-08
Extent
237 bytes
Resource Type
Text
Resource Subtype
Dissertation
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Access restricted to authorized Georgia Tech users only.