Title:
Chemical Vapor Deposition Of Transistion Metals

dc.contributor.patentcreator Erbil, Ahmet
dc.date.accessioned 2017-05-12T14:26:12Z
dc.date.available 2017-05-12T14:26:12Z
dc.date.filed 6/22/1988
dc.date.issued 2/12/1991
dc.description.abstract Coatings of Group IIA metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula (I) wherein M is a transition metal of Group VB, VIB, VIIB or VIII, R₁ is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, R₂ is a hydrogen or lower alkyl or alkenyl radical, n is the valence of M and is an integer from 2 to 4, and p is an integer from 0 to (n-1), is contacted with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula I is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as manganese telluride can be deposited from a manganese compound of formula I and a heat decomposable tellurium compound under nonoxidizing conditions.
dc.description.assignee Georgia Tech Research Corporation
dc.identifier.cpc C07F9/00
dc.identifier.cpc C23C16/18
dc.identifier.cpc C07F17/00
dc.identifier.patentapplicationnumber 07/210079
dc.identifier.patentnumber 4992305
dc.identifier.uri http://hdl.handle.net/1853/56831
dc.identifier.uspc 427/252
dc.title Chemical Vapor Deposition Of Transistion Metals
dc.type Text
dc.type.genre Patent
dspace.entity.type Publication
local.contributor.corporatename Georgia Institute of Technology
local.relation.ispartofseries Georgia Tech Patents
relation.isOrgUnitOfPublication cc30e153-7a64-4ae2-9b1d-5436686785e3
relation.isSeriesOfPublication 0f49c79d-4efb-4bd9-b060-5c7f9191b9da
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