Title:
Chemical Vapor Deposition Of Group IIIB Metals
Chemical Vapor Deposition Of Group IIIB Metals
dc.contributor.patentcreator | Erbil, Ahmet | |
dc.date.accessioned | 2017-05-12T14:29:05Z | |
dc.date.available | 2017-05-12T14:29:05Z | |
dc.date.filed | 6/22/1988 | |
dc.date.issued | 11/21/1989 | |
dc.description.abstract | Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula (I) where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula I is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula I and a heat decomposable tellurium compound under nonoxidizing conditions. | |
dc.description.assignee | Georgia Tech Research Corporation | |
dc.identifier.cpc | C04B41/009 | |
dc.identifier.cpc | C04B41/4554 | |
dc.identifier.cpc | C04B41/81 | |
dc.identifier.patentapplicationnumber | 07/210020 | |
dc.identifier.patentnumber | 4882206 | |
dc.identifier.uri | http://hdl.handle.net/1853/57976 | |
dc.identifier.uspc | 427/229 | |
dc.title | Chemical Vapor Deposition Of Group IIIB Metals | |
dc.type | Text | |
dc.type.genre | Patent | |
dspace.entity.type | Publication | |
local.contributor.corporatename | Georgia Institute of Technology | |
local.relation.ispartofseries | Georgia Tech Patents | |
relation.isOrgUnitOfPublication | cc30e153-7a64-4ae2-9b1d-5436686785e3 | |
relation.isSeriesOfPublication | 0f49c79d-4efb-4bd9-b060-5c7f9191b9da |
Files
Original bundle
1 - 1 of 1