Title:
Chemical Vapor Deposition Of Group IIIB Metals

dc.contributor.patentcreator Erbil, Ahmet
dc.date.accessioned 2017-05-12T14:29:05Z
dc.date.available 2017-05-12T14:29:05Z
dc.date.filed 6/22/1988
dc.date.issued 11/21/1989
dc.description.abstract Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula (I) where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula I is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula I and a heat decomposable tellurium compound under nonoxidizing conditions.
dc.description.assignee Georgia Tech Research Corporation
dc.identifier.cpc C04B41/009
dc.identifier.cpc C04B41/4554
dc.identifier.cpc C04B41/81
dc.identifier.patentapplicationnumber 07/210020
dc.identifier.patentnumber 4882206
dc.identifier.uri http://hdl.handle.net/1853/57976
dc.identifier.uspc 427/229
dc.title Chemical Vapor Deposition Of Group IIIB Metals
dc.type Text
dc.type.genre Patent
dspace.entity.type Publication
local.contributor.corporatename Georgia Institute of Technology
local.relation.ispartofseries Georgia Tech Patents
relation.isOrgUnitOfPublication cc30e153-7a64-4ae2-9b1d-5436686785e3
relation.isSeriesOfPublication 0f49c79d-4efb-4bd9-b060-5c7f9191b9da
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