Title:
Methods Of Forming Oxide Masks With Submicron Openings And Microstructures Formed Thereby

dc.contributor.patentcreator Ayazi, Farrokh
dc.contributor.patentcreator Abdolvand, Reza
dc.contributor.patentcreator Anaraki, Siavash P.
dc.date.accessioned 2017-05-12T14:28:12Z
dc.date.available 2017-05-12T14:28:12Z
dc.date.filed 11/22/2004
dc.date.issued 6/6/2006
dc.description.abstract Processing techniques are disclosed for batch fabrication of microstructures comprising an oxide mask on a substrate with submicron openings formed therein, and microstructures having deep-submicron, high aspect-ratio etched trenches, using conventional optical photolithography. Exemplary high aspect-ratio etched-trench microstructures that may be produced include single crystal resonators and sensors.
dc.description.assignee Georgia Tech Research Corporation
dc.identifier.cpc B81C1/00619
dc.identifier.patentapplicationnumber 10/996683
dc.identifier.patentnumber 7056757
dc.identifier.uri http://hdl.handle.net/1853/57626
dc.identifier.uspc 438/48
dc.title Methods Of Forming Oxide Masks With Submicron Openings And Microstructures Formed Thereby
dc.type Text
dc.type.genre Patent
dspace.entity.type Publication
local.contributor.corporatename Georgia Institute of Technology
local.relation.ispartofseries Georgia Tech Patents
relation.isOrgUnitOfPublication cc30e153-7a64-4ae2-9b1d-5436686785e3
relation.isSeriesOfPublication 0f49c79d-4efb-4bd9-b060-5c7f9191b9da
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