Title:
Solution-processible high-permittivity nanocomposite gate insulators for organic field-effect transistors
Solution-processible high-permittivity nanocomposite gate insulators for organic field-effect transistors
Author(s)
Kim, P.
Domercq, Benoit
Jones, Simon C.
Hotchkiss, Peter J.
Marder, Seth R.
Kippelen, Bernard
Perry, Joseph W.
Zhang, Xiaohong
Domercq, Benoit
Jones, Simon C.
Hotchkiss, Peter J.
Marder, Seth R.
Kippelen, Bernard
Perry, Joseph W.
Zhang, Xiaohong
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Abstract
We report on solution-processible high permittivity nanocomposite gate insulators based on BaTiO₃ nanoparticles, surface-modified with a phosphonic acid, in poly(4-vinylphenol) for organic field-effect transistors. The use of surface-modified BaTiO₃ nanoparticles affords high quality nanocomposite thin films at large nanoparticle volume fractions (up to 37 vol %) with a large capacitance density and a low leakage current (10⁻⁸ A/cm²). The fabricated pentacene field-effect transistors using these nanocomposites show a large on/off current ratio (I on/off 10 ⁴- 10 ⁶) due to the high capacitance density and small leakage current of the gate insulator.
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Date Issued
2008-07-07
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Article