Title:
Design and reliability of high dynamic range RF building blocks in SOI CMOS and SiGe BiCMOS technologies

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dc.contributor.advisor Cressler, John D.
dc.contributor.author Madan, Anuj en_US
dc.contributor.committeeMember Chakraborty, Sudipto
dc.contributor.committeeMember Frazier, Bruno
dc.contributor.committeeMember Gerhardt, Rosario
dc.contributor.committeeMember Papapolymerou, John
dc.contributor.department Electrical and Computer Engineering en_US
dc.date.accessioned 2013-01-17T21:48:34Z
dc.date.available 2013-01-17T21:48:34Z
dc.date.issued 2011-10-11 en_US
dc.description.abstract The objective of the proposed research is to understand the design and reliability of RF front-end building blocks using SOI CMOS and SiGe BiCMOS technologies for high dynamic-range applications. This research leads to a comprehensive understanding of dynamic range in SOI CMOS devices and contributes to knowledge leading to improvement in overall dynamic range and reliability of RF building blocks. While the performance of CMOS transistors has been improving naturally with scaling, this work aims to explore the possibilities of improvement in RF performance and reliability using standard layouts (that don't need process modifications). The total-ionizing dose tolerance of SOI CMOS devices has been understood with extensive measurements. Furthermore, the role of body contacts in SOI technology is understood for dynamic range performance improvement. In this work, CMOS low-noise amplifier design for high linearity WLAN applications and its integration with RF switch on the same chip is presented. The LNA and switches designed provide state-of-the-art performance in silicon based technologies. Further, the work aims to explore applications of SiGe HBT in the context of highly linear and reliable RF building blocks. The RF reliability of SiGe HBT based RF switches is investigated and compared with CMOS counterparts. The inverse-mode operation of SiGe HBT based switches is understood to give considerably higher linearity. en_US
dc.description.degree PhD en_US
dc.identifier.uri http://hdl.handle.net/1853/45853
dc.publisher Georgia Institute of Technology en_US
dc.subject SOI en_US
dc.subject Dynamic range en_US
dc.subject CMOS en_US
dc.subject IIP3 en_US
dc.subject Switch en_US
dc.subject LNA en_US
dc.subject Noise figure en_US
dc.subject.lcsh Metal oxide semiconductors, Complementary
dc.subject.lcsh Radio frequency integrated circuits
dc.subject.lcsh Integrated circuits
dc.subject.lcsh Semiconductors
dc.title Design and reliability of high dynamic range RF building blocks in SOI CMOS and SiGe BiCMOS technologies en_US
dc.type Text
dc.type.genre Dissertation
dspace.entity.type Publication
local.contributor.advisor Cressler, John D.
local.contributor.corporatename School of Electrical and Computer Engineering
local.contributor.corporatename College of Engineering
relation.isAdvisorOfPublication 2df1dcb5-f1ce-4e65-a1eb-021f8a8ab8bc
relation.isOrgUnitOfPublication 5b7adef2-447c-4270-b9fc-846bd76f80f2
relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
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