Influence of solubility switching mechanism on resist performance in molecular glass resists
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Lawson, Richard A.
Lee, Cheng-Tsung
Henderson, Clifford L.
Whetsell, Robert
Yueh, Wang
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Abstract
Five different molecular glass chemically amplified photoresists which utilized different solubility switching mechanisms and chemistries, based on a tris(4-hydroxyphenyl)ethane (THPE) core, were synthesized and their performance compared. Three different positive tone systems were designed based on acid catalyzed deprotection of a phenolic hydroxyl group protected with one of the following groups: tert-butoxycarbonyl (tBoc), tetrahydropyranyl, or ethoxyethyl. Two negative tone systems were designed; one using cationic epoxide polymerization of pendant epoxides and one using condensation of the unprotected THPE with a multifunctional cross-linking additive. The tBoc system and negative tone systems showed good performance under deep UV and large field e-beam patterning, but the epoxide system showed far superior performance for high resolution electron beam patterning. It was able to produce 50 nm 1:1 line/space patterns and 30 nm lines on 1:3 line/space patterns with high sensitivity, good contrast, and a very low line edge roughness (3σ) of 2.3 nm using 100 keV electron beam patterning.
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2007-11
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