Broadband and High Linearity CMOS Double-Pole-Double-Throw (DPDT) Switch For 5G Communication
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Liu, Yuqi
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Abstract
T/R switches play an important role in modern 5G transceivers where they switch between the transmit and receive paths to interface with the antenna, while providing TX/RX isolation. It is critical for the T/R switch to have low insertion loss to maintain high efficiency/EIRP in the transmitting mode and low noise figure in the receiving mode for high link budget. In addition, the T/R switch needs to be capable of handling high power from the power amplifier. DPDT switches, which support one additional port compared to SPDT switches, are more flexible and attractive for multi-band, multi-polarization applications.
This work presents a broadband, highy linear DPDT switch design in a 45nm CMOS SOI process which employs shunt-series-shunt topology with thin-oxide transistor having low on-resistance in the series branch to provide low insertion loss and thick-oxide transistor having higher threshold and breakdown voltage in the shunt branch to offer high linearity. Together with resistive stacking of transistors and negative biasing schemes for further linearity and isolation enhancement, the proposed design achieves broadband operation from DC to 50GHz, with <3dB IL, >22dB isolation with power handling capability greater than half a watt.
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Date
2021-12-15
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