Title:
High-Efficiency Linear RF Power Amplifiers Development

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dc.contributor.advisor Allen, Phillip E.
dc.contributor.advisor Laskar, Joy
dc.contributor.author Srirattana, Nuttapong en_US
dc.contributor.committeeMember Cressler, John D.
dc.contributor.committeeMember Papapolymerou, John
dc.contributor.committeeMember Paul A. Kohl
dc.contributor.committeeMember Ye Li
dc.contributor.department Electrical and Computer Engineering en_US
dc.date.accessioned 2005-07-28T17:58:45Z
dc.date.available 2005-07-28T17:58:45Z
dc.date.issued 2005-04-14 en_US
dc.description.abstract Next generation mobile communication systems require the use of linear RF power amplifier for higher data transmission rates. However, linear RF power amplifiers are inherently inefficient and usually require additional circuits or further system adjustments for better efficiency. This dissertation focuses on the development of new efficiency enhancement schemes for linear RF power amplifiers. The multistage Doherty amplifier technique is proposed to improve the performance of linear RF power amplifiers operated in a low power level. This technique advances the original Doherty amplifier scheme by improving the efficiency at much lower power level. The proposed technique is supported by a new approach in device periphery calculation to reduce AM/AM distortion and a further improvement of linearity by the bias adaptation concept. The device periphery adjustment technique for efficiency enhancement of power amplifier integrated circuits is also proposed in this work. The concept is clearly explained together with its implementation on CMOS and SiGe RF power amplifier designs. Furthermore, linearity improvement technique using the cancellation of nonlinear terms is proposed for the CMOS power amplifier in combination with the efficiency enhancement technique. In addition to the efficiency enhancement of power amplifiers, a scalable large-signal MOSFET model using the modified BSIM3v3 approach is proposed. A new scalable substrate network model is developed to enhance the accuracy of the BSIM3v3 model in RF and microwave applications. The proposed model simplifies the modeling of substrate coupling effects in MOS transistor and provides great accuracy in both small-signal and large-signal performances. en_US
dc.description.degree Ph.D. en_US
dc.format.extent 1865179 bytes
dc.format.mimetype application/pdf
dc.identifier.uri http://hdl.handle.net/1853/6899
dc.language.iso en_US
dc.publisher Georgia Institute of Technology en_US
dc.subject CMOS en_US
dc.subject Doherty amplifiers
dc.subject Code division multiple access
dc.subject Efficiency enhancement
dc.subject MOSFET
dc.subject Transistor modeling
dc.subject Substrate coupling
dc.subject Scalable models
dc.subject SiGe HBTs
dc.subject Mobile communications
dc.subject Integrated circuits
dc.subject GaAs MESFETs
dc.subject.lcsh Power amplifiers Design and construction en_US
dc.subject.lcsh Mobile communication systems en_US
dc.subject.lcsh Metal oxide semiconductors, Complementary en_US
dc.subject.lcsh Amplifiers, Radio frequency Design and construction en_US
dc.title High-Efficiency Linear RF Power Amplifiers Development en_US
dc.type Text
dc.type.genre Dissertation
dspace.entity.type Publication
local.contributor.advisor Allen, Phillip E.
local.contributor.corporatename School of Electrical and Computer Engineering
local.contributor.corporatename College of Engineering
relation.isAdvisorOfPublication 879a4c69-4f23-429a-bd1e-a3aad73ce2dd
relation.isOrgUnitOfPublication 5b7adef2-447c-4270-b9fc-846bd76f80f2
relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
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