Title:
Method To Modify The Conductivity Of Graphene
Method To Modify The Conductivity Of Graphene
dc.contributor.patentcreator | Davidovic, Dragomir | |
dc.contributor.patentcreator | De Heer, Walter A. | |
dc.contributor.patentcreator | Malec, Christopher E. | |
dc.date.accessioned | 2017-05-12T14:26:05Z | |
dc.date.available | 2017-05-12T14:26:05Z | |
dc.date.filed | 10/12/2010 | |
dc.date.issued | 7/30/2013 | |
dc.description.abstract | A gated electrical device includes a non-conductive substrate and a graphene structure disposed on the non-conductive substrate. A metal gate is disposed directly on a portion of the graphene structure. The metal gate includes a first metal that has a high contact resistance with graphene. Two electrical contacts are each placed on the graphene structure so that the metal gate is disposed between the two electrical contacts. In a method of making a gated electrical device, a graphene structure is placed onto a non-conductive substrate. A metal gate is deposited directly on a portion of the graphene structure. Two electrical contacts are deposited on the graphene structure so that the metal gate is disposed between the two electrical contacts. | |
dc.description.assignee | Georgia Tech Research Corporation | |
dc.identifier.cpc | B82Y10/00 | |
dc.identifier.cpc | H01L51/0045 | |
dc.identifier.cpc | C01B2204/22 | |
dc.identifier.patentapplicationnumber | 12/902360 | |
dc.identifier.patentnumber | 8497499 | |
dc.identifier.uri | http://hdl.handle.net/1853/56787 | |
dc.identifier.uspc | 257/40 | |
dc.title | Method To Modify The Conductivity Of Graphene | |
dc.type | Text | |
dc.type.genre | Patent | |
dspace.entity.type | Publication | |
local.contributor.corporatename | Georgia Institute of Technology | |
local.relation.ispartofseries | Georgia Tech Patents | |
relation.isOrgUnitOfPublication | cc30e153-7a64-4ae2-9b1d-5436686785e3 | |
relation.isSeriesOfPublication | 0f49c79d-4efb-4bd9-b060-5c7f9191b9da |
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