Title:
Method To Modify The Conductivity Of Graphene

dc.contributor.patentcreator Davidovic, Dragomir
dc.contributor.patentcreator De Heer, Walter A.
dc.contributor.patentcreator Malec, Christopher E.
dc.date.accessioned 2017-05-12T14:26:05Z
dc.date.available 2017-05-12T14:26:05Z
dc.date.filed 10/12/2010
dc.date.issued 7/30/2013
dc.description.abstract A gated electrical device includes a non-conductive substrate and a graphene structure disposed on the non-conductive substrate. A metal gate is disposed directly on a portion of the graphene structure. The metal gate includes a first metal that has a high contact resistance with graphene. Two electrical contacts are each placed on the graphene structure so that the metal gate is disposed between the two electrical contacts. In a method of making a gated electrical device, a graphene structure is placed onto a non-conductive substrate. A metal gate is deposited directly on a portion of the graphene structure. Two electrical contacts are deposited on the graphene structure so that the metal gate is disposed between the two electrical contacts.
dc.description.assignee Georgia Tech Research Corporation
dc.identifier.cpc B82Y10/00
dc.identifier.cpc H01L51/0045
dc.identifier.cpc C01B2204/22
dc.identifier.patentapplicationnumber 12/902360
dc.identifier.patentnumber 8497499
dc.identifier.uri http://hdl.handle.net/1853/56787
dc.identifier.uspc 257/40
dc.title Method To Modify The Conductivity Of Graphene
dc.type Text
dc.type.genre Patent
dspace.entity.type Publication
local.contributor.corporatename Georgia Institute of Technology
local.relation.ispartofseries Georgia Tech Patents
relation.isOrgUnitOfPublication cc30e153-7a64-4ae2-9b1d-5436686785e3
relation.isSeriesOfPublication 0f49c79d-4efb-4bd9-b060-5c7f9191b9da
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