Title:
InP-based heterojunction bipolar transistors for high speed and RF power applications : advanced emitter-base designs

dc.contributor.advisor Brown, April S.
dc.contributor.author Yi, Changhyun en_US
dc.contributor.department Electrical and Computer Engineering en_US
dc.contributor.department Electrical Engineering en_US
dc.date.accessioned 2006-12-21T15:11:05Z
dc.date.available 2006-12-21T15:11:05Z
dc.date.issued 2002-08 en_US
dc.description.degree Ph.D. en_US
dc.format.extent 237 bytes
dc.format.mimetype text/html
dc.identifier.bibid 638747 en_US
dc.identifier.uri http://hdl.handle.net/1853/13083
dc.language.iso en_US
dc.publisher Georgia Institute of Technology en_US
dc.rights Access restricted to authorized Georgia Tech users only. en_US
dc.subject.lcsh Bipolar transistors en_US
dc.subject.lcsh Microwaves en_US
dc.title InP-based heterojunction bipolar transistors for high speed and RF power applications : advanced emitter-base designs en_US
dc.type Text
dc.type.genre Dissertation
dspace.entity.type Publication
local.contributor.corporatename School of Electrical and Computer Engineering
local.contributor.corporatename College of Engineering
relation.isOrgUnitOfPublication 5b7adef2-447c-4270-b9fc-846bd76f80f2
relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
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