InP-based heterojunction bipolar transistors for high speed and RF power applications :
advanced emitter-base designs
Author(s)
Yi, Changhyun
Advisor(s)
Brown, April S.
Editor(s)
Collections
Supplementary to:
Permanent Link
Abstract
Sponsor
Date
2002-08
Extent
237 bytes
Resource Type
Text
Resource Subtype
Dissertation
Rights Statement
Access restricted to authorized Georgia Tech users only.