Title:
Silicon Based Nanospheres And Nanowires

dc.contributor.patentcreator Gole, James L.
dc.contributor.patentcreator Wang, Zhong L.
dc.date.accessioned 2017-05-12T14:28:18Z
dc.date.available 2017-05-12T14:28:18Z
dc.date.filed 9/30/2002
dc.date.issued 3/6/2007
dc.description.abstract Nanostructures and methods of fabrication thereof are disclosed. One representative nanostructure includes a silicon dioxide (SiO2)/tin oxide (SnOx) nanostructure, where x is between about 1 to about 2. The SiO2/SnOx nanostructure includes a SiO2 nanostructure having SnOx nanoclusters dispersed over a portion of the surface of the SiO2 nanostructure.
dc.description.assignee Georgia Tech Research Corporation
dc.identifier.cpc B01J23/14
dc.identifier.cpc C01B33/18
dc.identifier.cpc C04B35/62805
dc.identifier.patentapplicationnumber 10/261148
dc.identifier.patentnumber 7186669
dc.identifier.uri http://hdl.handle.net/1853/57673
dc.identifier.uspc 502/242
dc.title Silicon Based Nanospheres And Nanowires
dc.type Text
dc.type.genre Patent
dspace.entity.type Publication
local.contributor.corporatename Georgia Institute of Technology
local.relation.ispartofseries Georgia Tech Patents
relation.isOrgUnitOfPublication cc30e153-7a64-4ae2-9b1d-5436686785e3
relation.isSeriesOfPublication 0f49c79d-4efb-4bd9-b060-5c7f9191b9da
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