Characterization and modeling of hot carrier degradation in silicon-germanium HBTs
Author(s)
Wier, Brian R.
Advisor(s)
Editor(s)
Collections
Supplementary to:
Permanent Link
Abstract
This thesis describes the characterization and modeling of various hot carrier degradation mechanisms in silicon-germanium heterojunction bipolar transistors. An analysis of measured stress data and TCAD simulations for a SiGe HBT operated at high current densities is presented. Additionally, the framework for a compact model implementation of mixed-mode degradation is described.
Sponsor
Date
2015-04-24
Extent
Resource Type
Text
Resource Subtype
Thesis