Ballistic transport in hexagonal boron nitride/epigraphene/silicon carbide heterostructures
Author(s)
Nunn, Grant
Advisor(s)
Berger, Claire
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Abstract
Ballistic transport was observed in a novel hBN/epigraphene/SiC heterostructure. Such structures are of interest as graphene requires a dielectric coating for gating and protection in any optoelectronic graphene-based device architecture. I will present a new method to grow graphene fully encapsulated at the interface between a SiC substrate and a deposited BN film, ensuring that the graphene is never exposed to the environment. The technique utilizes the epigraphene growth mechanism through decomposition of the SiC interface under the BN film capping. During this process, BN crystallizes into h-BN, forming a monolithic heterostructure suitable for top-gating. I will discuss the electrical connections of epigraphene devices to external leads, with or without seamless graphene interconnects. The measured charge density is typical for epigraphene, however remarkably, significant ballistic transport is observed with a mean free path exceeding the device scale.
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Date
2025-05-19
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Dissertation