Title:
Void Formation Study of Flip Chip in Package Using No-Flow Underfill
Void Formation Study of Flip Chip in Package Using No-Flow Underfill
dc.contributor.author | Lee, Sangil | en_US |
dc.contributor.author | Yim, Myung Jin | en_US |
dc.contributor.author | Master, Raj N. | en_US |
dc.contributor.author | Wong, C. P. | en_US |
dc.contributor.author | Baldwin, Daniel F. | en_US |
dc.contributor.corporatename | Georgia Institute of Technology. School of Mechanical Engineering | en_US |
dc.contributor.corporatename | Georgia Institute of Technology. School of Materials Science and Engineering | en_US |
dc.contributor.corporatename | Advanced Micro Devices (Firm) | en_US |
dc.date.accessioned | 2009-04-28T19:47:02Z | |
dc.date.available | 2009-04-28T19:47:02Z | |
dc.date.issued | 2008-10 | |
dc.description | ©2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or distribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. | en_US |
dc.description | DOI: 10.1109/TEPM.2008.2002951 | en_US |
dc.description.abstract | The advanced flip chip in package (FCIP) process using no-flow underfill material for high I/O density and fine-pitch interconnect applications presents challenges for an assembly process that must achieve high electrical interconnect yield and high reliability performance. With respect to high reliability, the voids formed in the underfill between solder bumps or inside the solder bumps during the no-flow underfill assembly process of FCIP devices have been typically considered one of the critical concerns affecting assembly yield and reliability performance. In this paper, the plausible causes of underfill void formation in FCIP using no-flow underfill were investigated through systematic experimentation with different types of test vehicles. For instance, the effects of process conditions, material properties, and chemical reaction between the solder bumps and no-flow underfill materials on the void formation behaviors were investigated in advanced FCIP assemblies. In this investigation, the chemical reaction between solder and underfill during the solder wetting and underfill cure process has been found to be one of the most significant factors for void formation in high I/O and fine-pitch FCIP assembly using no-flow underfill materials. | en_US |
dc.identifier.citation | IEEE Transactions on Electronics Packaging Manufacturing, Vol. 31, no. 4, October 2008, 297-305 | en_US |
dc.identifier.issn | 1521-334X | |
dc.identifier.uri | http://hdl.handle.net/1853/27851 | |
dc.language.iso | en_US | en_US |
dc.publisher | Georgia Institute of Technology | en_US |
dc.publisher.original | Institute of Electrical and Electronics Engineers, Inc. | en_US |
dc.subject | Chemical reaction | en_US |
dc.subject | Flip chip | en_US |
dc.subject | Fine pitch | en_US |
dc.subject | High I/O | en_US |
dc.subject | Density | en_US |
dc.subject | No-flow underfill | en_US |
dc.subject | Reliability | en_US |
dc.subject | Void formation | en_US |
dc.title | Void Formation Study of Flip Chip in Package Using No-Flow Underfill | en_US |
dc.type | Text | |
dc.type.genre | Article | |
dspace.entity.type | Publication | |
local.contributor.author | Wong, C. P. | |
local.contributor.corporatename | School of Materials Science and Engineering | |
local.contributor.corporatename | College of Engineering | |
relation.isAuthorOfPublication | 76540daf-1e96-4626-9ec1-bc8ed1f88e0a | |
relation.isOrgUnitOfPublication | 21b5a45b-0b8a-4b69-a36b-6556f8426a35 | |
relation.isOrgUnitOfPublication | 7c022d60-21d5-497c-b552-95e489a06569 |