Title:
Analysis of four (4) GaAs FET's

dc.contributor.author Cox, Noah Walter en_US
dc.contributor.corporatename Georgia Institute of Technology. Office of Sponsored Programs en_US
dc.contributor.corporatename Georgia Institute of Technology. Engineering Experiment Station en_US
dc.contributor.corporatename Georgia Institute of Technology. Office of Sponsored Programs
dc.date.accessioned 2013-11-21T12:31:44Z
dc.date.available 2013-11-21T12:31:44Z
dc.date.issued 1981 en_US
dc.description Issued as Final report, Project A-2917 en_US
dc.description Final report has title: Analysis of microwave field effect transistors en_US
dc.identifier.other 168710 en_US
dc.identifier.uri http://hdl.handle.net/1853/49515
dc.publisher Georgia Institute of Technology en_US
dc.relation.ispartofseries Engineering Experiment Station ; Project no. A-2917 en_US
dc.subject.lcsh Microwave transistors en_US
dc.subject.lcsh Field-effect transistors en_US
dc.title Analysis of four (4) GaAs FET's en_US
dc.title.alternative Analysis of microwave field effect transistors en_US
dc.type Text
dc.type.genre Technical Report
dspace.entity.type Publication
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