Title:
Growth and characterization of III-nitride materials for high efficiency optoelectronic devices by metalorganic chemical vapor deposition

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dc.contributor.advisor Dupuis, Russell D.
dc.contributor.author Choi, Suk en_US
dc.contributor.committeeMember Kippelen, Bernard
dc.contributor.committeeMember Klein, Banjamin
dc.contributor.committeeMember Kohl, Paul
dc.contributor.committeeMember Shen, Shyh-Chiang
dc.contributor.department Electrical and Computer Engineering en_US
dc.date.accessioned 2013-01-17T21:33:55Z
dc.date.available 2013-01-17T21:33:55Z
dc.date.issued 2012-12-18 en_US
dc.description.abstract Efficiency droop is a critical issue for the Group III-nitride based light-emitting diodes (LEDs) to be competitive in the general lighting application. Carrier spill-over have been suggested as an origin of the efficiency droop, and an InAlN electron-blocking layer (EBL) is suggested as a replacement of the conventional AlGaN EBL for improved performance of LED. Optimum growth condition of InAlN layer was developed, and high quality InAlN layer was grown by using metalorganic chemical vapor deposition (MOCVD). A LED structure employing an InAlN EBL was grown and its efficiency droop performance was compared with a LED with an AlGaN EBL. Characterization results suggested that the InAlN EBL delivers more effective electron blocking over AlGaN EBL. Hole-injection performance of the InAlN EBL was examined by growing and testing a series of LEDs with different InAlN EBL thickness. Analysis results by using extended quantum efficiency model shows that further improvement in the performance of LED requires better hole-injection performance of the InAlN EBL. Advanced EBL structures such as strain-engineered InAlN EBL and compositionally-graded InAlN EBLs for the delivery of higher hole-injection efficiency were also grown and tested. en_US
dc.description.degree PhD en_US
dc.identifier.uri http://hdl.handle.net/1853/45823
dc.publisher Georgia Institute of Technology en_US
dc.subject Epitaxial growth en_US
dc.subject Mocvd en_US
dc.subject InAlN en_US
dc.subject Nitride en_US
dc.subject Led en_US
dc.subject Thin film en_US
dc.subject Heterostructures en_US
dc.subject Epitaxy en_US
dc.subject.lcsh Light emitting diodes
dc.subject.lcsh Optoelectronic devices
dc.subject.lcsh Liquid phase epitaxy
dc.subject.lcsh Molecular beam epitaxy
dc.subject.lcsh Nitrides
dc.title Growth and characterization of III-nitride materials for high efficiency optoelectronic devices by metalorganic chemical vapor deposition en_US
dc.type Text
dc.type.genre Dissertation
dspace.entity.type Publication
local.contributor.advisor Dupuis, Russell D.
local.contributor.corporatename School of Electrical and Computer Engineering
local.contributor.corporatename College of Engineering
relation.isAdvisorOfPublication 22f6625a-f5ee-44d3-b9ba-932c2994c5e4
relation.isOrgUnitOfPublication 5b7adef2-447c-4270-b9fc-846bd76f80f2
relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
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