Back-End-of-Line Mechanical Stress Effects in SiGe HBTs at Cryogenic Temperatures
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Moody, Jackson
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Abstract
SiGe heterojunction bipolar transistors (HBTs) are well suited to operating in cryogenic
environments, which are found in areas from deep space exploration to radio astronomy and
quantum computing. One problem in deploying SiGe HBTs to cryogenic environments is
increased device-to-device variability, a major factor of which is variations in mechanical
stress caused by metal routing (referred to as the back-end-of-line, or BEOL) above and in
the immediate vicinity of the active devices. The impact of BEOL stress on SiGe HBTs
at crygenic temperatures has been presented in [1]. This work does a deeper examina-
tion of the theoretical and measured impact of BEOL stress on SiGe HBTs at cryogenic
temperatures.
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2024-04-30
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