Title:
Back-End-of-Line Mechanical Stress Effects in SiGe HBTs at Cryogenic Temperatures

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Moody, Jackson
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Advisor(s)
Cressler, John D.
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Abstract
SiGe heterojunction bipolar transistors (HBTs) are well suited to operating in cryogenic environments, which are found in areas from deep space exploration to radio astronomy and quantum computing. One problem in deploying SiGe HBTs to cryogenic environments is increased device-to-device variability, a major factor of which is variations in mechanical stress caused by metal routing (referred to as the back-end-of-line, or BEOL) above and in the immediate vicinity of the active devices. The impact of BEOL stress on SiGe HBTs at crygenic temperatures has been presented in [1]. This work does a deeper examina- tion of the theoretical and measured impact of BEOL stress on SiGe HBTs at cryogenic temperatures.
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Date Issued
2024-04-30
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