High-Efficiency Millimeter Wave Frequency Quadrupler Design with SiGe BiCMOS Technology
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Mensah, Yaw
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Abstract
This thesis discusses the design of W-Band (75-110 GHz) quadruplers by proposing two new techniques implemented on SiGe heterojunction bipolar transistor (HBT) platforms with the focus of improving drain efficiency.
Chapter 1 presents the background and motivation of this research. An introduction to the role of microwave radar in automotive radar systems and the importance of frequency quadruplers in these systems are discussed. Also, the system challenges of operating microwave radar at W-Band are explained. Then, a brief overview of the role and common implementations of frequency multipliers in literature are presented. Furthermore, a brief background of SiGe HBTs and its role in aiding in the development of automotive radar is discussed.
Chapter 2 presents the design of the first W-Band quadrupler. This quadrupler utilizes a series balun as the interstage transition of two cascaded push-push doublers (PPDs). This minimizes the interstage loss while also allowing the two PPDs to share the same supply current. This work was published in IEEE Microwave and Wireless Technology Letters [1].
Chapter 3 presents a W-Band stacked quadrupler with a dual-driven core quadrupler. The topology circumvents the need of an interstage balun by using a pair of push-push doublers, whose input signals are 90◦ out-of-phase, as an input stage to drive a third, dual-driven push-push doubler. This alleviates the drive requirement of the preceding PPD pairs, which results in the preceding stages requiring less DC power consumption. Consequently, the drain efficiency of the quadrupler is improved. The measurement results and a comparison to the state of the art of this and the current-reuse quadrupler are shown. The work of this paper has been prepared and will be submitted to the 2024 International Microwave Symposium.
Chapter 4 provides a summary and presents potential future work
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2023-12-13
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