Title:
High-aspect-ratio Metal-polymer Composite Structures For Nano Interconnects

dc.contributor.patentcreator Aggarwal, Ankur
dc.contributor.patentcreator Raj, Pulugurtha Markondeya
dc.contributor.patentcreator Tummala, Rao R.
dc.date.accessioned 2017-05-12T14:28:24Z
dc.date.available 2017-05-12T14:28:24Z
dc.date.filed 1/10/2005
dc.date.issued 8/28/2007
dc.description.abstract A low-temperature process that combines high-aspect-ratio polymer structures with electroless copper plating to create laterally compliant MEMS structures. These structures can be used as IC-package interconnects that can lead to reliable, low-cost and high-performance nano wafer-level packaging. High-aspect-ratio low CTE polyimide structures with low stress, high toughness and strength were fabricated using plasma etching. The dry etching process was tuned to yield a wall angle above 80 degrees leading to an aspect ratio higher than 4. The etching process also leads to roughened sidewalls for selective electroless plating on the sidewalls of the polymer structures. These fabricated structures show reduction in the stresses at the interfaces and superior reliability as IC-package nano interconnects. Metal-coated polymer structures from MEMS fabrication techniques can provide low-cost high-performance solutions for wafer-level-packaging.
dc.description.assignee Georgia Tech Research Corp.
dc.identifier.cpc B81C1/00619
dc.identifier.cpc Y10S977/888
dc.identifier.cpc Y10S977/89
dc.identifier.patentapplicationnumber 11/032301
dc.identifier.patentnumber 7262075
dc.identifier.uri http://hdl.handle.net/1853/57701
dc.identifier.uspc 438/106
dc.title High-aspect-ratio Metal-polymer Composite Structures For Nano Interconnects
dc.type Text
dc.type.genre Patent
dspace.entity.type Publication
local.contributor.corporatename Georgia Institute of Technology
local.relation.ispartofseries Georgia Tech Patents
relation.isOrgUnitOfPublication cc30e153-7a64-4ae2-9b1d-5436686785e3
relation.isSeriesOfPublication 0f49c79d-4efb-4bd9-b060-5c7f9191b9da
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