Title:
Residual stress moire interferometry of silcon crystals

dc.contributor.author Danyluk, Steven
dc.contributor.corporatename Georgia Institute of Technology. Office of Sponsored Programs en_US
dc.contributor.corporatename Georgia Institute of Technology. School of Mechanical Engineering en_US
dc.date.accessioned 2016-06-09T17:30:01Z
dc.date.available 2016-06-09T17:30:01Z
dc.date.issued 1997-09
dc.description Issued as Monthly reports [nos. 1-8] and Final report, Project E-25-A76 en_US
dc.embargo.terms null en_US
dc.identifier e-25-a76
dc.identifier.uri http://hdl.handle.net/1853/55147
dc.language.iso en_US en_US
dc.publisher Georgia Institute of Technology en_US
dc.relation.ispartofseries School of Mechanical Engineering ; Project no. E-25-A76 en_US
dc.subject.lcsh Silicon crystals
dc.subject.lcsh Residual stresses
dc.title Residual stress moire interferometry of silcon crystals en_US
dc.type Text
dc.type.genre Technical Report
dspace.entity.type Publication
local.contributor.author Danyluk, Steven
relation.isAuthorOfPublication 87cdff3a-1d95-4b3b-97f3-fa686905084b
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