Title:
Structural characterization of epitaxial graphene on silicon carbide
Structural characterization of epitaxial graphene on silicon carbide
dc.contributor.advisor | Conrad, Edward H. | |
dc.contributor.advisor | First, Phillip N. | |
dc.contributor.author | Hass, Joanna R. | en_US |
dc.contributor.committeeMember | Carter, Brent | |
dc.contributor.committeeMember | de Heer, Walter | |
dc.contributor.committeeMember | Zangwill, Andrew | |
dc.contributor.department | Physics | en_US |
dc.date.accessioned | 2009-01-22T15:54:16Z | |
dc.date.available | 2009-01-22T15:54:16Z | |
dc.date.issued | 2008-11-17 | en_US |
dc.description.abstract | Graphene, a single sheet of carbon atoms sp2-bonded in a honeycomb lattice, is a possible all-carbon successor to silicon electronics. Ballistic conduction at room temperature and a linear dispersion relation that causes carriers to behave as massless Dirac fermions are features that make graphene promising for high-speed, low-power devices. The critical advantage of epitaxial graphene (EG) grown on SiC is its compatibility with standard lithographic procedures. Surface X-ray diffraction (SXRD) and scanning tunneling microscopy (STM) results are presented on the domain structure, interface composition and stacking character of graphene grown on both polar faces of semi-insulating 4H-SiC. The data reveal intriguing differences between graphene grown on these two faces. Substrate roughening is more pronounced and graphene domain sizes are significantly smaller on the SiC (0001) Si-face. Specular X-ray reflectivity measurements show that both faces have a carbon rich, extended interface that is tightly bound to the first graphene layer, leading to a buffering effect that shields the first graphene layer from the bulk SiC, as predicted by ab initio calculations. In-plane X-ray crystal truncation rod analysis indicates that rotated graphene layers are interleaved in C-face graphene films and corresponding superstructures are observed in STM topographs. These rotational stacking faults in multilayer C-face graphene preserve the linear dispersion found in single layer graphene, making EG electronics possible even for a multilayer material. | en_US |
dc.description.degree | Ph.D. | en_US |
dc.identifier.uri | http://hdl.handle.net/1853/26654 | |
dc.publisher | Georgia Institute of Technology | en_US |
dc.subject | Graphene | en_US |
dc.subject | Epitaxial graphene | en_US |
dc.subject | X-ray diffraction | en_US |
dc.subject | STM | en_US |
dc.subject | SiC | en_US |
dc.subject.lcsh | Epitaxy | |
dc.subject.lcsh | Silicon carbide | |
dc.subject.lcsh | Metal oxide semiconductors, Complementary Design and construction | |
dc.subject.lcsh | Carbon and graphite products | |
dc.subject.lcsh | Crystal lattices | |
dc.title | Structural characterization of epitaxial graphene on silicon carbide | en_US |
dc.type | Text | |
dc.type.genre | Dissertation | |
dspace.entity.type | Publication | |
local.contributor.advisor | First, Phillip N. | |
local.contributor.corporatename | College of Sciences | |
local.contributor.corporatename | School of Physics | |
relation.isAdvisorOfPublication | 27457b31-ba84-4744-bc5d-eb7c418ef57e | |
relation.isOrgUnitOfPublication | 85042be6-2d68-4e07-b384-e1f908fae48a | |
relation.isOrgUnitOfPublication | 2ba39017-11f1-40f4-9bc5-66f17b8f1539 |
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