Title:
Structural characterization of epitaxial graphene on silicon carbide

dc.contributor.advisor Conrad, Edward H.
dc.contributor.advisor First, Phillip N.
dc.contributor.author Hass, Joanna R. en_US
dc.contributor.committeeMember Carter, Brent
dc.contributor.committeeMember de Heer, Walter
dc.contributor.committeeMember Zangwill, Andrew
dc.contributor.department Physics en_US
dc.date.accessioned 2009-01-22T15:54:16Z
dc.date.available 2009-01-22T15:54:16Z
dc.date.issued 2008-11-17 en_US
dc.description.abstract Graphene, a single sheet of carbon atoms sp2-bonded in a honeycomb lattice, is a possible all-carbon successor to silicon electronics. Ballistic conduction at room temperature and a linear dispersion relation that causes carriers to behave as massless Dirac fermions are features that make graphene promising for high-speed, low-power devices. The critical advantage of epitaxial graphene (EG) grown on SiC is its compatibility with standard lithographic procedures. Surface X-ray diffraction (SXRD) and scanning tunneling microscopy (STM) results are presented on the domain structure, interface composition and stacking character of graphene grown on both polar faces of semi-insulating 4H-SiC. The data reveal intriguing differences between graphene grown on these two faces. Substrate roughening is more pronounced and graphene domain sizes are significantly smaller on the SiC (0001) Si-face. Specular X-ray reflectivity measurements show that both faces have a carbon rich, extended interface that is tightly bound to the first graphene layer, leading to a buffering effect that shields the first graphene layer from the bulk SiC, as predicted by ab initio calculations. In-plane X-ray crystal truncation rod analysis indicates that rotated graphene layers are interleaved in C-face graphene films and corresponding superstructures are observed in STM topographs. These rotational stacking faults in multilayer C-face graphene preserve the linear dispersion found in single layer graphene, making EG electronics possible even for a multilayer material. en_US
dc.description.degree Ph.D. en_US
dc.identifier.uri http://hdl.handle.net/1853/26654
dc.publisher Georgia Institute of Technology en_US
dc.subject Graphene en_US
dc.subject Epitaxial graphene en_US
dc.subject X-ray diffraction en_US
dc.subject STM en_US
dc.subject SiC en_US
dc.subject.lcsh Epitaxy
dc.subject.lcsh Silicon carbide
dc.subject.lcsh Metal oxide semiconductors, Complementary Design and construction
dc.subject.lcsh Carbon and graphite products
dc.subject.lcsh Crystal lattices
dc.title Structural characterization of epitaxial graphene on silicon carbide en_US
dc.type Text
dc.type.genre Dissertation
dspace.entity.type Publication
local.contributor.advisor First, Phillip N.
local.contributor.corporatename College of Sciences
local.contributor.corporatename School of Physics
relation.isAdvisorOfPublication 27457b31-ba84-4744-bc5d-eb7c418ef57e
relation.isOrgUnitOfPublication 85042be6-2d68-4e07-b384-e1f908fae48a
relation.isOrgUnitOfPublication 2ba39017-11f1-40f4-9bc5-66f17b8f1539
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