Title:
Method For Ion Implantation Induced Embedded Particle Formation Via Reduction

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dc.contributor.patentcreator Hampikian, Janet M.
dc.contributor.patentcreator Hunt, Eden M.
dc.date.accessioned 2017-05-12T14:27:40Z
dc.date.available 2017-05-12T14:27:40Z
dc.date.filed 12/23/1997
dc.date.issued 9/25/2001
dc.description.abstract A method for ion implantation induced embedded particle formation via reduction with the steps of ion implantation with an ion/element that will chemically reduce the chosen substrate material, implantation of the ion/element to a sufficient concentration and at a sufficient energy for particle formation, and control of the temperature of the substrate during implantation. A preferred embodiment includes the formation of particles which are nano-dimensional ( <100 m-n in size). The phase of the particles may be affected by control of the substrate temperature during and/or after the ion implantation process.
dc.description.assignee Georgia Tech Research Corp.
dc.identifier.cpc C04B41/0027
dc.identifier.cpc C04B41/009
dc.identifier.cpc C04B41/80
dc.identifier.patentapplicationnumber 08/996968
dc.identifier.patentnumber 6294223
dc.identifier.uri http://hdl.handle.net/1853/57400
dc.identifier.uspc 427/526
dc.title Method For Ion Implantation Induced Embedded Particle Formation Via Reduction
dc.type Text
dc.type.genre Patent
dspace.entity.type Publication
local.contributor.corporatename Georgia Institute of Technology
local.relation.ispartofseries Georgia Tech Patents
relation.isOrgUnitOfPublication cc30e153-7a64-4ae2-9b1d-5436686785e3
relation.isSeriesOfPublication 0f49c79d-4efb-4bd9-b060-5c7f9191b9da
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