Title:
High-performance and electrically stable C ₆₀ organic field-effect transistors
High-performance and electrically stable C ₆₀ organic field-effect transistors
| dc.contributor.author | Domercq, Benoit | en_US |
| dc.contributor.author | Kippelen, Bernard | en_US |
| dc.contributor.author | Zhang, Xiaohong | en_US |
| dc.contributor.corporatename | Georgia Institute of Technology. Center for Organic Photonics and Electronics | en_US |
| dc.contributor.corporatename | Georgia Institute of Technology. School of Electrical and Computer Engineering | en_US |
| dc.date.accessioned | 2013-04-03T17:57:52Z | |
| dc.date.available | 2013-04-03T17:57:52Z | |
| dc.date.issued | 2007-08 | |
| dc.description | © 2007 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.2778472 | en_US |
| dc.description | DOI: 10.1063/1.2778472 | en_US |
| dc.description.abstract | Electron mobility ranging from 2.7 to 5.0 cm²/V s was achieved when treating the gate dielectric with divinyltetramethyldisiloxane bis(benzocyclobutene) and depositing C ₆₀ at room temperature. The transistors combine threshold voltages near zero, low subthreshold slopes (<0.7 V/decade), on/off current ratios larger than 10 ⁶, excellent reproducibility, and good electrical stability under prolonged continuous dc bias stress. | en_US |
| dc.identifier.citation | Zhang, X.-H. and Domercq, Benoit and Kippelen, Bernard, "High-performance and electrically stable C-60 organic field-effect transistors," Applied Physics Letters, 91, 9, (August 27 2007) | en_US |
| dc.identifier.doi | 10.1063/1.2778472 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.uri | http://hdl.handle.net/1853/46620 | |
| dc.publisher | Georgia Institute of Technology | en_US |
| dc.publisher.original | American Institute of Physics | en_US |
| dc.subject | Field effect devices | en_US |
| dc.subject | Molecular electronic devices | en_US |
| dc.subject | Electron mobility | en_US |
| dc.subject | Elemental semiconductors | en_US |
| dc.subject | Field effect transistors | en_US |
| dc.subject | Fullerene devices | en_US |
| dc.subject | Fullerenes | en_US |
| dc.subject | Organic semiconductors | en_US |
| dc.subject | Semiconductor thin films | en_US |
| dc.subject | Stability | en_US |
| dc.subject | Stress effects | en_US |
| dc.subject | Thin film transistors | en_US |
| dc.title | High-performance and electrically stable C ₆₀ organic field-effect transistors | en_US |
| dc.type | Text | |
| dc.type.genre | Article | |
| dspace.entity.type | Publication | |
| local.contributor.author | Kippelen, Bernard | |
| local.contributor.corporatename | Center for Organic Photonics and Electronics | |
| relation.isAuthorOfPublication | 89dff3fa-f69f-48dc-a1b2-89e73be81537 | |
| relation.isOrgUnitOfPublication | 43f8dc5f-0678-4f07-b44a-edbf587c338f |
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