Title:
High-performance and electrically stable C ₆₀ organic field-effect transistors
High-performance and electrically stable C ₆₀ organic field-effect transistors
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Author(s)
Domercq, Benoit
Kippelen, Bernard
Zhang, Xiaohong
Kippelen, Bernard
Zhang, Xiaohong
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Abstract
Electron mobility ranging from 2.7 to 5.0 cm²/V s was achieved when treating the gate dielectric with divinyltetramethyldisiloxane bis(benzocyclobutene) and depositing C ₆₀ at room temperature. The transistors combine threshold voltages near zero, low subthreshold slopes (<0.7 V/decade), on/off current ratios larger than 10 ⁶, excellent reproducibility, and good electrical stability under prolonged continuous dc bias stress.
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2007-08
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