Title:
An assessment of silicon-germanium BiCMOS technologies for extreme environment applications
An assessment of silicon-germanium BiCMOS technologies for extreme environment applications
dc.contributor.advisor | Cressler, John D. | |
dc.contributor.author | Lourenco, Nelson Estacio | en_US |
dc.contributor.committeeMember | Davis, Jeffrey A. | |
dc.contributor.committeeMember | Papapolymerou, Ioannis | |
dc.contributor.department | Electrical and Computer Engineering | en_US |
dc.date.accessioned | 2013-01-17T22:08:04Z | |
dc.date.available | 2013-01-17T22:08:04Z | |
dc.date.issued | 2012-11-13 | en_US |
dc.description.abstract | This thesis evaluates the suitability of silicon-germanium technology for electronic systems intended for extreme environments, such as ambient temperatures outside of military specification (-55 degC to 125 degC) range and intense exposures to ionizing radiation. Silicon-germanium devices and circuits were characterized at cryogenic and high-temperatures (up to 300 degC) and exposed to ionizing radiation, providing empirical evidence that silicon-germanium is an excellent platform for terrestrial and space-based electronic applications. | en_US |
dc.description.degree | MS | en_US |
dc.identifier.uri | http://hdl.handle.net/1853/45959 | |
dc.publisher | Georgia Institute of Technology | en_US |
dc.subject | Silicon-germanium | en_US |
dc.subject | Extreme environments | en_US |
dc.subject | Heterojunction bipolar transistor | en_US |
dc.subject | Space environments | en_US |
dc.subject | Total ionizing dose | en_US |
dc.subject | Radiation tolerant | en_US |
dc.subject | Single event effects | en_US |
dc.subject.lcsh | Semiconductors | |
dc.subject.lcsh | Electronics Materials | |
dc.subject.lcsh | Germanium Effect of radiation on | |
dc.subject.lcsh | Silicon alloys Effect of radiation on | |
dc.subject.lcsh | Metal oxide semiconductors, Complementary | |
dc.subject.lcsh | Silicon alloys Effect of temperature on | |
dc.title | An assessment of silicon-germanium BiCMOS technologies for extreme environment applications | en_US |
dc.type | Text | |
dc.type.genre | Thesis | |
dspace.entity.type | Publication | |
local.contributor.advisor | Cressler, John D. | |
local.contributor.corporatename | School of Electrical and Computer Engineering | |
local.contributor.corporatename | College of Engineering | |
relation.isAdvisorOfPublication | 2df1dcb5-f1ce-4e65-a1eb-021f8a8ab8bc | |
relation.isOrgUnitOfPublication | 5b7adef2-447c-4270-b9fc-846bd76f80f2 | |
relation.isOrgUnitOfPublication | 7c022d60-21d5-497c-b552-95e489a06569 |
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