An assessment of silicon-germanium BiCMOS technologies for extreme environment applications

dc.contributor.advisor Cressler, John D.
dc.contributor.author Lourenco, Nelson Estacio en_US
dc.contributor.committeeMember Davis, Jeffrey A.
dc.contributor.committeeMember Papapolymerou, Ioannis
dc.contributor.department Electrical and Computer Engineering en_US
dc.date.accessioned 2013-01-17T22:08:04Z
dc.date.available 2013-01-17T22:08:04Z
dc.date.issued 2012-11-13 en_US
dc.description.abstract This thesis evaluates the suitability of silicon-germanium technology for electronic systems intended for extreme environments, such as ambient temperatures outside of military specification (-55 degC to 125 degC) range and intense exposures to ionizing radiation. Silicon-germanium devices and circuits were characterized at cryogenic and high-temperatures (up to 300 degC) and exposed to ionizing radiation, providing empirical evidence that silicon-germanium is an excellent platform for terrestrial and space-based electronic applications. en_US
dc.description.degree MS en_US
dc.identifier.uri http://hdl.handle.net/1853/45959
dc.publisher Georgia Institute of Technology en_US
dc.subject Silicon-germanium en_US
dc.subject Extreme environments en_US
dc.subject Heterojunction bipolar transistor en_US
dc.subject Space environments en_US
dc.subject Total ionizing dose en_US
dc.subject Radiation tolerant en_US
dc.subject Single event effects en_US
dc.subject.lcsh Semiconductors
dc.subject.lcsh Electronics Materials
dc.subject.lcsh Germanium Effect of radiation on
dc.subject.lcsh Silicon alloys Effect of radiation on
dc.subject.lcsh Metal oxide semiconductors, Complementary
dc.subject.lcsh Silicon alloys Effect of temperature on
dc.title An assessment of silicon-germanium BiCMOS technologies for extreme environment applications en_US
dc.type Text
dc.type.genre Thesis
dspace.entity.type Publication
local.contributor.advisor Cressler, John D.
local.contributor.corporatename School of Electrical and Computer Engineering
local.contributor.corporatename College of Engineering
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relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
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